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5,10-bis(trimethyltin)-3,8-di(2-ethylhexyloxy)naphtho[3,2-b:7,6-b′]dithiophene | 1396466-28-6

中文名称
——
中文别名
——
英文名称
5,10-bis(trimethyltin)-3,8-di(2-ethylhexyloxy)naphtho[3,2-b:7,6-b′]dithiophene
英文别名
2,6-bis-(trimethyltin)-4,8-di(2-ethylhexyloxy)benzo[1,2-b:4,5-b']dithiophene
5,10-bis(trimethyltin)-3,8-di(2-ethylhexyloxy)naphtho[3,2-b:7,6-b′]dithiophene化学式
CAS
1396466-28-6
化学式
C36H56O2S2Sn2
mdl
——
分子量
822.391
InChiKey
ZZOSXCPPXOPQSX-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    11.55
  • 重原子数:
    42.0
  • 可旋转键数:
    16.0
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.61
  • 拓扑面积:
    18.46
  • 氢给体数:
    0.0
  • 氢受体数:
    4.0

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    参考文献:
    名称:
    단분자 유기 반도체 화합물, 이의 제조방법 및 이를 채용한 유기 반도체 소자
    摘要:
    본 발명은 단분자 유기 반도체 화합물과 이의 제조방법 및 이를 함유한 유기 반도체 소자를 제공하며, 상기 단분자 유기 반도체 화합물은 전하이동도와 광안정성이 높고, 곁가지를 가지고 있어 용해도가 높아 용액 공정기반에 유용하여, 이를 함유한 유기반도체 소자는 높은 효율을 가진다.
    公开号:
    KR101484921B1
  • 作为产物:
    描述:
    参考文献:
    名称:
    Synthesis and Characterization of a Novel Naphthodithiophene-Based Copolymer for Use in Polymer Solar Cells
    摘要:
    A novel naphtho[2,3-b:6,7-d']dithiophene (NDT)-based copolymer, poly[4,9-bis(2-ethylhexyloxy)naphtho[2,3-b:6,7-d']dithiophene-2,7-diyl-alt-1,3-(5-heptadecan-9-yl)-4H-thieno[3,4-c]pyrrole-4,6-dione] (P1), was synthesized and characterized for use in polymer solar cells. We systematically investigated the synthesis, thermal stability, optical and electrochemical properties, field-effect carrier mobilities, and photovoltaic characteristics of the resulting polymer. The properties of the NDT-based polymer were compared with those of poly[4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b']dithiophene-alt-1,3-(5-heptadecan-9-yl)-4H-thieno[3,4-c]pyrrole-4,6-dione] (P2) prepared via the same synthetic procedure. Polymer solar cells made from the new polymer, P1, yielded a power conversion efficiency of 4.0% with a short-circuit current density of 11.54 mA/cm(2), an open-circuit voltage of 0.69 V, and a fill factor of 0.50 under AM 1.5 G irradiation (100 mW/cm(2)).
    DOI:
    10.1021/ma301312d
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