2,7-dipentyl[1]benzothieno[3,2-b][1]benzothiophene | 1003601-76-0

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻吩类
• 英文名称: 2,7-dipentyl[1]benzothieno[3,2-b][1]benzothiophene
• 英文别名: 2,7-dipentyl-[1]benzothieno[3,2-b]benzothiophene；2,7-dipentylbenzo[b]benzo[4,5] thieno[2,3-d]-thiophene；2,7-Dipentyl-[1]benzothiolo[3,2-b][1]benzothiole
• CAS: 1003601-76-0
• 化学式: C₂₄H₂₈S₂
• 分子量: 380.618
• InChiKey: WKTBDDYRGNVYIH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  10.2
• 重原子数：
  26
• 可旋转键数：
  8
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.42
• 拓扑面积：
  56.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  2,7-di-pentyn-1-yl[1]benzothieno[3,2-b][1]benzothiophene 在 palladium on activated charcoal 氢气 作用下， 以 甲苯 为溶剂， 以71%的产率得到2,7-dipentyl[1]benzothieno[3,2-b][1]benzothiophene
  参考文献：
  名称：

  Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors

  摘要：

  2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm(2) V-1 S-1 and /(n)//(off) of -10(7).

  DOI：

  10.1021/ja074841i

文献信息

• Semiconductor composition
  申请人：Wu Yiliang

  公开号：US08945425B2

  公开（公告）日：2015-02-03

  An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.

  一种电子设备，例如薄膜晶体管，包括由半导体组成形成的半导体层。半导体组成物包括聚合物粘合剂和小分子半导体。半导体层中的小分子半导体具有小于100纳米的晶粒尺寸。使用该组成物形成的设备表现出高迁移率和优异的稳定性。
• Organic electroluminescent transistor
  申请人：Flexterra, Inc.

  公开号：US10964919B2

  公开（公告）日：2021-03-30

  The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

  本发明涉及一种具有改进发光特性的有机电致发光晶体管。更具体地说，本发明的有机电致发光晶体管具有一个发射性伏极通道，包括至少一层 n 型半导体材料、至少一层 p 型半导体材料以及至少一层排列在 p 型和 n 型半导体材料层之间的发射性材料、其中，多层发射型伏极通道在各层中包括一层由苯并噻吩化合物组成的p型半导体材料层，和/或一层由混合材料组成的发射材料层，混合材料包括作为主基体化合物的有机咔唑衍生物和作为客发射体的铱络合物。
• ORGANIC ELECTROLUMINESCENT TRANSISTOR
  申请人：E.T.C. S.r.l.

  公开号：EP3172778A1

  公开（公告）日：2017-05-31
• SEMICONDUCTOR COMPOSITION
  申请人：Wu Yiliang

  公开号：US20120161110A1

  公开（公告）日：2012-06-28

  An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor of Formula (I): wherein R 1 , m, n, a, b, c, and X are as described herein. Devices formed from the composition exhibit high mobility and excellent stability.
• Organic Electroluminescent Transistor
  申请人：E.T.C. S.R.L.

  公开号：US20170237042A1

  公开（公告）日：2017-08-17

  The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.