Triphenylfulgensaeure | 64698-35-7

• 分子结构分类: 有机化合物 - 苯丙烷和聚酮 - 二苯乙烯类
• 英文名称: Triphenylfulgensaeure
• 英文别名: 1.4.4-Triphenylbutadien-2.3-dicarbonsaeure；benzhydrylidene-benzylidene-succinic acid；Benzhydryliden-benzyliden-bernsteinsaeure；1.1.4-Triphenyl-butadien-(1.3)-dicarbonsaeure-(2.3)；α.α.δ-Triphenyl-α.γ-butadien-β.γ-dicarbonsaeure；Diphenylmethylen-benzyliden-bernsteinsaeure；Diphenylmethylen-benzal-bernsteinsaeure；2-benzhydrylidene-3-benzylidenebutanedioic acid
• CAS: 64698-35-7
• 化学式: C₂₄H₁₈O₄
• 分子量: 370.405
• InChiKey: GOEZENMXZJUCKB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.74
• 重原子数：
  28.0
• 可旋转键数：
  6.0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  74.6
• 氢给体数：
  2.0
• 氢受体数：
  2.0

反应信息

• 作为反应物：
  描述：

  Triphenylfulgensaeure 在 sodium amalgam 作用下， 生成 2-benzhydryl-3-benzyl-succinic acid 、 alkaline earth salt of/the/ methylsulfuric acid
  参考文献：
  名称：

  Stobbe; v. Vigier, Chemische Berichte, 1904, vol. 37, p. 2665,2667

  摘要：

  DOI：
• 作为产物：
  描述：

  alkaline earth salt of/the/ methylsulfuric acid 在 sodium ethanolate 作用下， 生成 Triphenylfulgensaeure
  参考文献：
  名称：

  Stobbe; Badenhausen, Chemische Berichte, 1906, vol. 39, p. 772

  摘要：

  DOI：

文献信息

• MBE growth and device processing of MWIR HgCdTe on large area Si substrates
  作者：G. Brill、S. Velicu、P. Boieriu、Y. Chen、N. K. Dhar、T. S. Lee、Y. Selamet、S. Sivananthan

  DOI：10.1007/bf02665861

  日期：2001.6

  The traditional substrate of choice for HgCdTe material growth has been lattice matched bulk CdZnTe material. However, as larger array sizes are required for future devices, it is evident that current size limitations of bulk substrates will become an issue and therefore large area Si substrates will become a requirement for HgCdTe growth in order to maintain the cost-efficiency of future systems. As a result, traditional substrate mounting methods that use chemical compounds to adhere the substrate to the substrate holder may pose significant technical challenges to the growth and fabrication of HgCdTe on large area Si substrates. For these reasons, non-contact (indium-free) substrate mounting was used to grow mid-wave infrared (MWIR) HgCdTe material on 3" CdTe/Si substrates. In order to maintain a constant epilayer temperature during HgCdTe nucleation, reflection high-energy electron diffraction (RHEED) was implemented to develop a substrate temperature ramping profile for HgCdTe nucleation. The layers were characterized ex-situ using Fourier transform infrared (FTIR) and etch pit density measurements to determine structural characteristics. Dislocation densities typically measured in the 9 x 10(6) cm(-2) to 1 x 10(7) cm(-2) range and showed a strong correlation between ramping profile and Cd composition, indicating the uniqueness of the ramping profiles. Hall and photoconductive decay measurements were used to characterize the electrical properties of the layers. Additionally, both single element and 32 x 32 photovoltaic devices were fabricated from these layers. A RA value of 1.8 x 10(6) Omega -cm(2) measured at - 40 mV was obtained for MWIR material, which is comparable to HgCdTe grown on bulk CdZnTe substrates.
• Stobbe, Chemische Berichte, 1897, vol. 30, p. 95
  作者：Stobbe

  DOI：——

  日期：——
• Stobbe; Kohlmann; Naoum, Chemische Berichte, 1904, vol. 37, p. 2657
  作者：Stobbe、Kohlmann、Naoum

  DOI：——

  日期：——
• Stobbe; Badenhausen, Chemische Berichte, 1906, vol. 39, p. 770,772
  作者：Stobbe、Badenhausen

  DOI：——

  日期：——
• Stobbe; Kohlmann; Naoum, Chemische Berichte, 1904, vol. 37, p. 2659
  作者：Stobbe、Kohlmann、Naoum

  DOI：——

  日期：——