2-dodecyl[1]benzothieno[3,2-b][1]benzothiophene | 473723-50-1

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻吩类
• 英文名称: 2-dodecyl[1]benzothieno[3,2-b][1]benzothiophene
• 英文别名: 2-Dodecylbenzo[b]benzo[4,5]thieno[2,3-d]thiophene；2-dodecyl-[1]benzothiolo[3,2-b][1]benzothiole
• CAS: 473723-50-1
• 化学式: C₂₆H₃₂S₂
• 分子量: 408.672
• InChiKey: WUBNDWNLTKQZKF-UHFFFAOYSA-N

物化性质

• 沸点：
  552.9±30.0 °C(Predicted)
• 密度：
  1.108±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  11.6
• 重原子数：
  28
• 可旋转键数：
  11
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.46
• 拓扑面积：
  56.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2-dodecyl[1]benzothieno[3,2-b][1]benzothiophene 在 溴 作用下， 以 二氯甲烷 为溶剂， 反应 3.0h， 以76%的产率得到
  参考文献：
  名称：

  Charge transport property of asymmetric Alkyl-BTBT LC semiconductor possessing a fluorophenyl group

  摘要：

  In the present study, a LC semiconductor, 2-dodecyl-7-(4-fluorophenyl)-[1] benzothieno[3,2-b][1]benzothiophene (FPh-BTBT-C12) was studied on charge carrier mobility correlated to the mesomorphism. The introduction of a fluorophenyl group on alkyl-BTBT core part leads the higher thermal stability of the mesophase. The observed drift carrier mobility of hole is 0.07cm(2) V-1 s(-1) in the lower temperature smectic mesophase by time-of-flight technique. We used FPh-BTBT-C12 solutions (e.g. 0.1 wt% in p-xylene) for forming an organic semiconductor layer by solution casting, and fabricated top-contact/bottom-gate type filed effect transistor devices and its mobility was determined 0.42cm(2) V-1 s(-1) at room temperature.

  DOI：

  10.1080/15421406.2017.1289443
• 作为产物：
  描述：

  二氯甲基苯 在 氢氧化钾 、 三氯化铝 、 sulfur 、 一水合肼 作用下， 以 二氯甲烷 、 乙二醇 为溶剂， 反应 34.75h， 生成 2-dodecyl[1]benzothieno[3,2-b][1]benzothiophene
  参考文献：
  名称：

  Reactivity of [1]Benzothieno[3,2-b][1]benzothiophene - Electrophilic and Metallation Reactions

  摘要：

  研究了对位杂环1的亲电取代硝化、甲酰化和乙酰化。单取代反应优先在2位发生，其次在4位发生。显著降低反应温度可以增加硝化和乙酰化的区域选择性。对1的2-取代衍生物的取代反应导致了相应的2,7-双取代衍生物作为主要产物。还观察到其他区异构体的形成。用丁基锂对1进行金属化反应时，优先在1位发生；随后与N,N-二甲基甲酰胺、二氧化碳或碘反应，产生相应的1-取代衍生物。长链的2,7-双取代衍生物表现出液晶性质。

  DOI：

  10.1135/cccc20020645

文献信息

• [EN] SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b] [1]-BENZOTHIOPHENES<br/>[FR] SEMI-CONDUCTEURS BASÉS SUR DES [1]BENZOTHIÉNO[3,2-B]-[1]-BENZOTHIOPHÈNES SUBSTITUÉS
  申请人：HERAEUS CLEVIOS GMBH

  公开号：WO2012010292A1

  公开（公告）日：2012-01-26

  The present invention relates to compounds of the general formula (I) wherein Z corresponds to - a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2 = C1-C18- alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3 = C1-C18-alkyl), - a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups— P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2 = C1-C18- alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3 = C1-C18-alkyl), - a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -S03H, halosilyl radicals -SiHalnR23-n (R2 = C1-C18- alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3 = C1-C18-alkyl), or - a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2 = C1-C18- alkyl, n = an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3 = C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).

  本发明涉及一般式（I）的化合物，其中Z对应于： - 一个被卤素、磷酸或磷酸酯基取代的C1-C22烷基基团 -P(O)(OR1)2（其中基团R1可以相同或不同，对应于氢原子或C1-C12烷基）， - 磺酸基团-SO3H， - 卤代硅烷基团-SiHalnR23-n（其中R2 = C1-C18烷基，n = 1至3的整数）， - 巯基团或三烷氧基硅烷基团-Si(OR3)3（其中R3 = C1-C18烷基）， - 一个被卤素、磷酸或磷酸酯基取代的C5-C12环烷基团 -P(O)(OR1)2（其中基团R1可以相同或不同，对应于氢原子或C1-C12烷基）， - 磺酸基团-SO3H， - 卤代硅烷基团-SiHalnR23-n（其中R2 = C1-C18烷基，n = 1至3的整数）， - 巯基团或三烷氧基硅烷基团-Si(OR3)3（其中R3 = C1-C18烷基）， - 一个被卤素、磷酸或磷酸酯基取代的C6-C14芳基或杂环芳基团，从噻吩基、吡咯基、呋喃基或吡啶基的群中选择 -P(O)(OR1)2（其中基团R1可以相同或不同，对应于氢原子或C1-C12烷基）， - 磺酸基团-SO3H， - 卤代硅烷基团-SiHalnR23-n（其中R2 = C1-C18烷基，n = 1至3的整数）， - 巯基团或三烷氧基硅烷基团-Si(OR3)3（其中R3 = C1-C18烷基）， - 或一个可选地被卤素、磷酸或磷酸酯基取代的C7-C30芳基烷基团 -P(O)(OR1)2（其中基团R1可以相同或不同，对应于氢原子或C1-C12烷基）， - 磺酸基团-SO3H， - 卤代硅烷基团-SiHalnR23-n（其中R2 = C1-C18烷基，n = 1至3的整数）， - 巯基团或三烷氧基硅烷基团-Si(OR3)3（其中R3 = C1-C18烷基）， - 或三烷基硅烷基团R5R6R7Si，其中R5、R6、R7相互独立且相同或不同的是C1-C18烷基。本发明还涉及半导体层、电子元件、电子元件的制备方法、通过该方法获得的电子元件以及一般式（I）的化合物的用途。
• SEMICONDUCTORS BASED ON SUBSTITUTED [1]BENZOTHIENO[3,2-b][1]-BENZOTHIOPHENES
  申请人：Meyer-Friedrichsen Timo

  公开号：US20130146858A1

  公开（公告）日：2013-06-13

  The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C 1 -C 22 -alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR 1 ) 2 (wherein the radicals R 1 can be identical or different and correspond to a hydrogen atom or C 1 -C 12 -alkyl), sulphonic acid groups —SO 3 H, halosilyl radicals —SiHal n R 2 3−n (R 2 ═C 1 -C 18 -alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR 3 ) 3 (R 3 ═C 1 -C 18 -alkyl), — a C 5 -C 12 -cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR 1 ) 2 (wherein the radicals R 1 can be identical or different and correspond to a hydrogen atom or C 1 -C 12 -alkyl), sulphonic acid groups —SO 3 H, halosilyl radicals —SiHal −n R 2 3−n (R 2 ═C 1 -C 18 -alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR 3 ) 3 (R 3 ═C 1 -C 18 -alkyl), — a C 6 -C 14 -aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR 1 ) 2 (wherein the radicals R 1 can be identical or different and correspond to a hydrogen atom or C 1 -C 12 -alkyl), sulphonic acid groups —SO 3 H, halosilyl radicals —SiHal n R 2 3−n (R 2 ═C 1 -C 18 -alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR 3 ) 3 (R 3 ═C 1 -C 18 -alkyl), or — a C 7 -C 30 -aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR 1 ) 2 (wherein the radicals R 1 can be identical or different and correspond to a hydrogen atom or C 1 -C 12 -alkyl), sulphonic acid groups —SO 3 H, halosilyl radicals —SiHal n R 2 3−n (R 2 ═C 1 -C 18 -alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR 3 ) 3 (R 3 ═C 1 -C 18 -alkyl) or a trialkylsilyl radical R 5 R 6 R 7 Si, in which R 5 , R 6 , R 7 independently of each other are identical or different C 1 -C 18 -alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).

  本发明涉及一般式（I）的化合物，其中Z对应于一个被卤素，膦酸或膦酸酯基团取代的C1-C22烷基基团，-P（O）（OR1）2（其中基团R1可以相同或不同，对应于氢原子或C1-C12烷基），磺酸基团-SO3H，卤代硅基团-SiHalnR23−n（R2 = C1-C18烷基，n = 1至3的整数），硫醇基团或三烷氧基硅基团-Si（OR3）3（R3 = C1-C18烷基），-被卤素，膦酸或膦酸酯基团取代的C5-C12环烷基基团-P（O）（OR1）2（其中基团R1可以相同或不同，对应于氢原子或C1-C12烷基），磺酸基团-SO3H，卤代硅基团-SiHal−nR23−n（R2 = C1-C18烷基，n = 1至3的整数），硫醇基团或三烷氧基硅基团-Si（OR3）3（R3 = C1-C18烷基），-从噻吩基，吡咯基，呋喃基或吡啶基的基团中取代的C6-C14芳基基团或杂环芳基基团，被卤素，膦酸或膦酸酯基团取代-P（O）（OR1）2（其中基团R1可以相同或不同，对应于氢原子或C1-C12烷基），磺酸基团-SO3H，卤代硅基团-SiHalnR23−n（R2 = C1-C18烷基，n = 1至3的整数），硫醇基团或三烷氧基硅基团-Si（OR3）3（R3 = C1-C18烷基），或者是C7-C30芳基基团，可选择地被卤素，膦酸或膦酸酯基团取代-P（O）（OR1）2（其中基团R1可以相同或不同，对应于氢原子或C1-C12烷基），磺酸基团-SO3H，卤代硅基团-SiHalnR23−n（R2 = C1-C18烷基，n = 1至3的整数），硫醇基团或三烷氧基硅基团-Si（OR3）3（R3 = C1-C18烷基）或三烷基硅基团R5R6R7Si，在其中R5，R6，R7相互独立是相同或不同的C1-C18烷基基团。本发明还涉及半导体层，电子元件，生产电子元件的工艺，通过该工艺获得的电子元件以及一般式（I）的化合物的用途。