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2,7-ditetradecyl[1]benzothieno[3,2-b][1]benzothiophene | 1003601-82-8

中文名称
——
中文别名
——
英文名称
2,7-ditetradecyl[1]benzothieno[3,2-b][1]benzothiophene
英文别名
2,7-Di(tetradecyl)-[1]benzothiolo[3,2-b][1]benzothiole;2,7-di(tetradecyl)-[1]benzothiolo[3,2-b][1]benzothiole
2,7-ditetradecyl[1]benzothieno[3,2-b][1]benzothiophene化学式
CAS
1003601-82-8
化学式
C42H64S2
mdl
——
分子量
633.102
InChiKey
ANSPSIGCRLPUJY-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    20
  • 重原子数:
    44
  • 可旋转键数:
    26
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.67
  • 拓扑面积:
    56.5
  • 氢给体数:
    0
  • 氢受体数:
    2

反应信息

  • 作为产物:
    描述:
    2,7-ditetradecyn-1-yl[1]benzothieno[3,2-b][1]benzothiophene 在 palladium on activated charcoal 氢气 作用下, 以 甲苯 为溶剂, 以91%的产率得到2,7-ditetradecyl[1]benzothieno[3,2-b][1]benzothiophene
    参考文献:
    名称:
    Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors
    摘要:
    2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm(2) V-1 S-1 and /(n)//(off) of -10(7).
    DOI:
    10.1021/ja074841i
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文献信息

  • Highly Soluble [1]Benzothieno[3,2-<i>b</i>]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors
    作者:Hideaki Ebata、Takafumi Izawa、Eigo Miyazaki、Kazuo Takimiya、Masaaki Ikeda、Hirokazu Kuwabara、Tatsuto Yui
    DOI:10.1021/ja074841i
    日期:2007.12.1
    2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm(2) V-1 S-1 and /(n)//(off) of -10(7).
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