N-phenylsulfonyloxynaphthalimide | 23928-87-2

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 异喹啉及其衍生物
• 英文名称: N-phenylsulfonyloxynaphthalimide
• 英文别名: 2-benzenesulfonyloxy-benzo[de]isoquinoline-1,3-dione；N-Phenysulfonyloxy-naphthalimid；Benzenesulfonic acid 1,3-dioxo-1H,3H-benzo[de]isoquinolin-2-yl ester；(1,3-dioxobenzo[de]isoquinolin-2-yl) benzenesulfonate
• CAS: 23928-87-2
• 化学式: C₁₈H₁₁NO₅S
• 分子量: 353.355
• InChiKey: IZGZHGAANAVEBU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  25
• 可旋转键数：
  3
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  89.1
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  N-phenylsulfonyloxynaphthalimide 在 氨 作用下， 以 甲醇 为溶剂， 以96%的产率得到1-carbamoylbenzo-2-indolone
  参考文献：
  名称：

  Trunov, S. P.; Plakidin, Val. L.; Zaitsev, B. E., Journal of Organic Chemistry USSR (English Translation), 1981, p. 893 - 897

  摘要：

  DOI：
• 作为产物：
  描述：

  N-羟基-1,8-萘二甲酰亚胺 、 苯磺酰氯 生成 N-phenylsulfonyloxynaphthalimide
  参考文献：
  名称：

  摘要：

  DOI：

文献信息

• Novel carbazole derivative and chemically amplified radiation-sensitive resin composition
  申请人：——

  公开号：US20020172885A1

  公开（公告）日：2002-11-21

  A carbazole derivative of the following formula (1), 1 wherein R 1 and R 2 individually represent a hydrogen atom or a monovalent organic group, or R 1 and R 2 form, together with the carbon atom to which R 1 and R 2 bond, a divalent organic group having a 3-8 member carbocyclic structure or a 3-8 member heterocyclic structure, and R 3 represents a hydrogen atom or a monovalent organic group. The carbazole derivative is suitable as an additive for increasing sensitivity of a chemically amplified resist. A chemically amplified radiation-sensitive resin composition, useful as a chemically amplified resist, comprising the carbazole derivative is also disclosed.

  以下是该段文字的中文翻译： 一种具有以下式（1）的咔唑衍生物，其中R1和R2分别代表氢原子或一价有机基团，或者R1和R2与其结合的碳原子一起形成具有3-8个成员碳环结构或3-8个成员杂环结构的二价有机基团，R3代表氢原子或一价有机基团。该咔唑衍生物适用作为增加化学增感抗蚀性的添加剂。还公开了一种化学增感辐射敏感树脂组合物，该组合物用作化学增感抗蚀剂，包括该咔唑衍生物。
• Novel anthracene derivative and radiation-sensitive resin composition
  申请人：——

  公开号：US20030194634A1

  公开（公告）日：2003-10-16

  A novel anthracene derivative useful as an additive to a radiation-sensitive resin composition is disclosed. The anthracene derivative has the following formula (1), 1 wherein R 1 groups individually represent a hydroxyl group or a monovalent organic group having 1-20 carbon atoms, n is an integer of 0-9, X is a single bond or a divalent organic group having 1-12 carbon atoms, and R 2 represents a monovalent acid-dissociable group. The radiation-sensitive resin composition comprises the anthracene derivative of the formula (1), a resin insoluble or scarcely soluble in alkali, but becomes alkali soluble in the presence of an acid, and a photoacid generator. The composition is useful as a chemically-amplified resist for microfabrication utilizing deep ultraviolet rays, typified by a KrF excimer laser and ArF excimer laser.

  揭示了一种作为辐射敏感树脂组合物添加剂有用的新型蒽衍生物。该蒽衍生物具有以下化学式（1），其中R1基分别表示一个羟基或具有1-20个碳原子的一价有机基团，n是0-9的整数，X是一个单键或具有1-12个碳原子的二价有机基团，R2表示一价酸可解离基团。辐射敏感树脂组合物包括化学式（1）的蒽衍生物，一种在碱性条件下不溶或几乎不溶但在存在酸时变为碱溶的树脂，以及光酸发生剂。该组合物可用作化学放大光刻胶，用于利用KrF准分子激光和ArF准分子激光等深紫外线进行微加工。
• FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20210165327A1

  公开（公告）日：2021-06-03

  An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. The problem described above can be solved by the following film forming material for lithography. A film forming material for lithography comprising: a compound having a group of formula (0A): (In formula (0A), R A is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R B is an alkyl group having 1 to 4 carbon atoms.); and a compound having a group of formula (0B):

  本发明的目的是提供一种适用于湿法的光刻膜材料，用于形成具有良好耐热性、耐蚀性、嵌入性和膜平整度的光刻胶底层膜，以及支撑材料之间高度差异的问题。以上所述的问题可以通过以下的光刻膜材料来解决。一种光刻膜材料，包括：具有公式（0A）组的化合物：（在公式（0A）中，RA是氢原子或具有1至4个碳原子的烷基；RB是具有1至4个碳原子的烷基。）；以及具有公式（0B）组的化合物：
• COMPOSITION FOR FORMING OPTICAL COMPONENT, OPTICAL COMPONENT, COMPOUND, AND RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20210309595A1

  公开（公告）日：2021-10-07

  Provided is a composition containing a polyphenol compound (B) and a solvent, in which the polyphenol compound (B) is at least one selected from a compound represented by the following formula (1) and a resin having a structure represented by the following formula (2): wherein R Y , R T , X, m, N, r, and L are as described in the description.

  提供的是含有多酚化合物(B)和溶剂的组合物，其中多酚化合物(B)至少选自以下式子(1)所表示的化合物和以下式子(2)所表示的具有结构的树脂之一：其中RY、RT、X、m、N、r和L如说明书中所述。
• Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition
  申请人：——

  公开号：US20030113658A1

  公开（公告）日：2003-06-19

  A novel photoacid generator containing a structure of the following formula (I), 1 wherein R is a monovalent organic group with a fluorine content of 50 wt % or less, a nitro group, a cyano group, or a hydrogen atom, and Z 1 and Z 2 are individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.

  提供一种新型光酸发生剂，其含有以下式(I)的结构，其中R是一种具有50重量％或以下氟含量，硝基，氰基或氢原子的一价有机基团，Z1和Z2分别是氟原子或具有1-10个碳原子的线性或支链全氟烷基团。当用于化学增感辐射敏感树脂组成物中时，该光酸发生剂表现出高透明度，相对高的可燃性和无生物积累，并产生具有高酸度，高沸点，适度短的扩散长度在抗蚀涂层中，并且对掩模图案密度的依赖性低的酸。