3-[3,4-Bis(3-aminopropyl)cyclohexyl]propan-1-amine | 858864-70-7

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 3-[3,4-Bis(3-aminopropyl)cyclohexyl]propan-1-amine
• CAS: 858864-70-7
• 化学式: C₁₅H₃₃N₃
• 分子量: 255.447
• InChiKey: XGGUHKRNLMSWEP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  18
• 可旋转键数：
  9
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  78.1
• 氢给体数：
  3
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  3-[3,4-Bis(2-cyanoethyl)cyclohexyl]propanenitrile 在 Raney Co 2724 slurry 氨 、 氢气 作用下， 以 甲醇 为溶剂， 75.0 ℃ 、6.21 MPa 条件下， 反应 12.0h， 生成 3-[3,4-Bis(3-aminopropyl)cyclohexyl]propan-1-amine
  参考文献：
  名称：

  Cyclohexane derivatives and methods for their preparation

  摘要：

  本文揭示了一种从1-,2-,4-三乙烯环己烷通过氢氰酸化反应制备腈衍生物及其相应胺的方法，随后进行氢化。还揭示了用于上述方法的新化合物。

  公开号：

  US20040122252A1

文献信息

• PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160041465A1

  公开（公告）日：2016-02-11

  The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
• RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170075224A1

  公开（公告）日：2017-03-16

  A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
• US9651863B2
  申请人：——

  公开号：US9651863B2

  公开（公告）日：2017-05-16
• US9939729B2
  申请人：——

  公开号：US9939729B2

  公开（公告）日：2018-04-10