tetrabutylammonium trichloroacetate | 18819-86-8

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: tetrabutylammonium trichloroacetate
• 英文别名: Tetrabutylazanium;2,2,2-trichloroacetate
• CAS: 18819-86-8
• 化学式: C₂Cl₃O₂*C₁₆H₃₆N
• 分子量: 404.848
• InChiKey: FLCDSBKFFIMXLQ-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  5.11
• 重原子数：
  24
• 可旋转键数：
  12
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.94
• 拓扑面积：
  40.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  (NBu₄)₂[ReBr₆] 以 二氯甲烷 、 溶剂黄146 、 三氟乙酸 为溶剂， 生成 tetrabutylammonium trichloroacetate
  参考文献：
  名称：

  Kelm, W.; Preetz, W., Zeitschrift fur Anorganische und Allgemeine Chemie

  摘要：

  DOI：

文献信息

• Self-decarboxylation of trichloroacetic acid redox catalyzed by trichloroacetate ions in acetonitrile solutions
  作者：Drochss P. Valencia、Pablo D. Astudillo、Annia Galano、Felipe J. González

  DOI：10.1039/c2ob26961a

  日期：——

  In mixtures of trichloroacetate ion and trichloroacetic acid in acetonitrile, trichloromethyl radicals are produced as a result of the redox reaction between the acid and its conjugate base. The reaction follows a loop mechanism in which the trichloroacetic acid is slowly consumed by proton reduction while the trichloroacetate ion is oxidized like in an electrochemical Kolbe reaction. The hydroqui

  在三氯乙酸根离子和 三氯乙酸 在 乙腈由于酸与其共轭碱之间发生氧化还原反应，因此会生成三氯甲基自由基。该反应遵循循环机理，其中三氯乙酸通过质子还原而缓慢消耗，而三氯乙酸根离子像在电化学Kolbe反应中一样被氧化。这对苯二酚-三氯乙酸盐配合物是这种意外的自脱羧氧化还原反应的良好传感器。
• Preparation of s,s and r,s amino acid isosteres
  申请人：Aerojet Fine Chemicals LLC

  公开号：EP1050532A2

  公开（公告）日：2000-11-08

  The present invention provides compounds and methods that can be used to convert the intermmediate halomethyl ketones (HMKs), e.g., chloromethyl ketones, to the corresponding S,S- and R,S- diastereomers. More particularly, the present invention provides: (1) reduction methods; (2) inversion methods; and (3) methods involving the epoxidation of alkenes. Using the various methods of the present invention, the R,S-epoxide and the intermediary compounds can be prepared reliably, in high yields and in high purity.

  本发明提供了可用于将中间体卤代甲基酮（HMKs），如氯代甲基酮转化为相应的S,S-和R,S-非对映异构体的化合物和方法。更具体地说，本发明提供了：(1) 还原方法；(2) 反转方法；(3) 涉及烯烃环氧化的方法。使用本发明的各种方法，可以可靠、高产和高纯度地制备 R,S-环氧化物和中间体化合物。
• Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
  申请人：Shinetsu Chemical Co., Ltd.

  公开号：EP1845132A2

  公开（公告）日：2007-10-17

  A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.

  含硅薄膜由一种热固化组合物形成，该组合物包括：(A) 一种含硅化合物，该化合物是通过在酸催化剂存在下使一种可水解的硅化合物发生水解缩合，并从反应混合物中基本除去酸催化剂而获得；(B) 锂、钠、钾、铷或铯的氢氧化物或有机酸盐，或一种锍、碘或铵化合物；(C) 一种有机酸；以及 (D) 一种有机溶剂。含硅薄膜可以有效地将上覆的光刻胶薄膜图案化。该组合物能有效地减少光刻后图案缺陷的出现，并具有货架稳定性。
• Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2063319A1

  公开（公告）日：2009-05-27

  A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.

  一种含金属氧化物的薄膜由一种热固化组合物形成，该组合物包括：(A) 通过可水解硅化合物和可水解金属化合物之间的水解缩合获得的含金属氧化物化合物；(B) Li、Na、K、Rb 或 Cs 的氢氧化物或有机酸盐，或锍、碘或铵化合物；(C) 有机酸；以及 (D) 有机溶剂。含金属氧化物的薄膜可确保有效的图案形成。
• Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172807A1

  公开（公告）日：2010-04-07

  There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.

  本发明公开了一种用于形成含硅薄膜的热固性组合物，该组合物用于形成在光刻中使用的多层抗蚀剂工艺中形成的含硅薄膜，至少包括(A)通过使用酸作为催化剂水解和缩合可水解硅化合物而获得的含硅化合物，(B)热交联促进剂，(C)具有 1 至 30 个碳原子的一价或二价或更多有机酸，(D)三价或更多醇，以及(E)有机溶剂。本发明可以提供一种含硅薄膜的组合物，该组合物可以在光刻胶膜中形成良好的图案，可以形成用于蚀刻掩膜的含硅薄膜，该薄膜具有良好的耐干蚀刻性，可以提供良好的储存稳定性，并且可以用用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液进行分层，还可以提供一种在其上形成含硅薄膜的基底，以及进一步提供一种形成图案的方法。