Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl -imino enolate compounds and α-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.
提供了用于形成含
金属薄膜的原子层沉积(ALD)和
化学气相沉积(CVD)前体。这些化合物包括具有分别为1、2和3的公式的三氮杂
戊二烯基-
亚胺烯醇化合物和α-
亚胺酮化合物。还提供了使用这些前体的ALD方法。