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phenanthro[5',6':5,6]pyrazino[2,3-b]phenazine | 216-10-4

中文名称
——
中文别名
——
英文名称
phenanthro[5',6':5,6]pyrazino[2,3-b]phenazine
英文别名
dibenzo[a,c]quinoxalino[2,3-i]phenazine;Dibenzo[a,c]chinoxalino[2,3-i]phenazin;Dibenzo[5,6:7,8]-quinoxalino-[2,3-i]phenazine;2,17,21,28-tetrazaheptacyclo[16.12.0.03,16.04,9.010,15.020,29.022,27]triaconta-1(30),2,4,6,8,10,12,14,16,18,20,22,24,26,28-pentadecaene
phenanthro[5',6':5,6]pyrazino[2,3-b]phenazine化学式
CAS
216-10-4
化学式
C26H14N4
mdl
——
分子量
382.424
InChiKey
ZKWBVHXDAUWTJM-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    715.7±25.0 °C(Predicted)
  • 密度:
    1.432±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    4.2
  • 重原子数:
    30
  • 可旋转键数:
    0
  • 环数:
    7.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    51.6
  • 氢给体数:
    0
  • 氢受体数:
    4

反应信息

  • 作为产物:
    描述:
    2,3-二氨基吩嗪菲醌溶剂黄146 为溶剂, 反应 5.0h, 以65%的产率得到phenanthro[5',6':5,6]pyrazino[2,3-b]phenazine
    参考文献:
    名称:
    On the Synthesis of Pyrazino[2,3-b]phenazine and 1H-Imidazo[4,5-b]phenazine Derivatives
    摘要:
    Several pyrazino[2,3-D]phenazine derivatives were prepared by the reaction of 2,3-diaminophenazine with different 1,2-diketones. Nucleophilic substitution of 2,3-dibromomethyl-pyrazino[2,3-b]phenazine with propanol, morpholine, and potassium thiocyanate gave 2,3-bis(propoxymethyl)-pyrazino[2,3-b]phenazine 2,3-bis-(4-morpholinylmethyl)-pyrazino[2,3-b]phenazine, and 2,3-bis-(cyanosulfanylmethyl)-pyrazino[2,3-b]phenazine. 2-Aryl-1H-imidazo[4,5-b]phenazine derivatives were synthesized by a one-pot reaction of 1,3-diaminophenazine with different aromatic aldehydes or acids. Reaction of 2,3-diaminophenazine with acetic anhydride and formic acid afforded 1H-imidazo[4,5-b]phenazine and 2-methyl-1H-imidazo[4,5-b]phenazine. Chemical and spectroscopic evidences for the product structures of the new compounds are presented.
    DOI:
    10.1007/pl00010183
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文献信息

  • Semiconductor composition comprising an inorganic semiconducting material and an organic binder
    申请人:Merck Patent GmbH
    公开号:US10326090B2
    公开(公告)日:2019-06-18
    The present invention relates to a semiconductor composition including an inorganic semiconducting material and an organic binder. The present invention further relates to an electronic device comprising a semiconducting layer consisting of such semiconductor composition.
    本发明涉及一种半导体组合物,包括一种无机半导体材料和一种有机粘合剂。本发明还涉及一种电子装置,该装置包括由这种半导体组合物构成的半导体层。
  • Sircar; Dutt, Journal of the Indian Chemical Society, 1923, vol. 1, p. 205
    作者:Sircar、Dutt
    DOI:——
    日期:——
  • Organic Thin Film Transistor Material, Organic Thin Film Transistor, Field-Effect Transistor, Switching Element, Organic Semiconductor Material and Organic Semiconductor Film
    申请人:Katakura Rie
    公开号:US20080121873A1
    公开(公告)日:2008-05-29
    An objective is to provide an organic thin film transistor material exhibiting an excellent property as a transistor together with reduced aging degradation, and also to provide an organic thin film transistor, a field-effect transistor, a switching element, an organic semiconductor material and an organic semiconductor film employing the organic thin film transistor material. Disclosed is an organic thin film transistor material possessing a compound represented by the following Formula (1). where A composed of a condensed ring formed with a 6 membered aromatic cycle or a 6 membered aromatic heterocycle represents C—R, N or P; at least one of As is N or P; R represents a hydrogen atom, a halogen atom or a substituent; and R may be bonded with other Rs with each other to form a ring.
  • Semiconductor Composition Comprising an Inorganic Semiconducting Material and an Organic Binder
    申请人:Merck Patent GmbH
    公开号:US20170309848A1
    公开(公告)日:2017-10-26
    The present invention relates to a semiconductor composition comprising an inorganic semiconducting material and an organic binder. The present invention further relates to an electronic device comprising a semiconducting layer consisting of such semiconductor composition.
  • [EN] SEMICONDUCTOR COMPOSITION COMPRISING AN INORGANIC SEMICONDUCTING MATERIAL AND AN ORGANIC BINDER<br/>[FR] COMPOSITION DE SEMI-CONDUCTEUR COMPRENANT UN MATÉRIAU SEMI-CONDUCTEUR INORGANIQUE ET UN LIANT ORGANIQUE
    申请人:MERCK PATENT GMBH
    公开号:WO2016050335A1
    公开(公告)日:2016-04-07
    The present invention relates to a semiconductor composition comprising an inorganic semiconducting material and an organic binder. The present invention further relates to an electronic device comprising a semiconducting layer consisting of such semiconductor composition.
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