Bu4N dichloroacetate | 18819-87-9

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: Bu4N dichloroacetate
• 英文别名: tetrabutylammonium dichloroacetate；Tetra-n-butylammonium; Dichloressigsaeure；2,2-Dichloroacetate;tetrabutylazanium
• CAS: 18819-87-9
• 化学式: C₂HCl₂O₂*C₁₆H₃₆N
• 分子量: 370.403
• InChiKey: SISVNZNTQJQGQM-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  4.54
• 重原子数：
  23
• 可旋转键数：
  12
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.94
• 拓扑面积：
  40.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  二氯乙酸 、 四丁基氢氧化铵 以 甲醇 、 乙醚 为溶剂， 生成 Bu4N dichloroacetate
  参考文献：
  名称：

  Spectral observation of conversion between ionized vs. non-ionized proton-coupled electron transfer interfaces

  摘要：

  酸和碱官能团之间的两点氢键为质子耦合电子转移（PCET）网络的模块化组装提供了一种便捷的方法，特别是当该界面包含脒和两点阴离子伴侣时；提出了一种系统，当已知共轭酸的 pKa 值时，可以确定界面内的质子构型。

  DOI：

  10.1039/b717747j

文献信息

• Delineation of the Critical Parameters of Salt Catalysts in the N <i>‐</i> Formylation of Amines with CO ₂
  作者：Martin Hulla、Daniel Ortiz、Sergey Katsyuba、Dmitry Vasilyev、Paul J. Dyson

  DOI：10.1002/chem.201901686

  日期：2019.8.22

  N-formylation of amines combining CO2 as a C1 source with a hydrosilane reducing agent is a convenient route for the synthesis of N-formylated compounds. A large number of salts including ionic liquids (ILs) have been shown to efficiently catalyze the reaction and, yet, the key features of the catalyst remain unclear and the best salt catalysts for the reaction remain unknown. Here we demonstrate the

  胺的N-甲酰化将CO2作为C1源与氢硅烷还原剂结合在一起，是合成N-甲酰化化合物的便捷途径。已显示出包括离子液体（ILs）在内的大量盐可以有效地催化反应，但是，催化剂的关键特征仍然不清楚，并且用于该反应的最佳盐催化剂仍然未知。在这里，我们证明了离子对对催化活性的不利影响，并说明了降低离子间相互作用强度以增强相互作用以及因此与底物之间的反应性的方法。与当前的假设相反，我们还表明，盐催化剂作为碱而不是亲核试剂更具活性，并确定了pKa，其中催化剂的亲核作用转换为更活泼的碱性作用。
• Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
  申请人：Shinetsu Chemical Co., Ltd.

  公开号：EP1845132A2

  公开（公告）日：2007-10-17

  A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.

  含硅薄膜由一种热固化组合物形成，该组合物包括：(A) 一种含硅化合物，该化合物是通过在酸催化剂存在下使一种可水解的硅化合物发生水解缩合，并从反应混合物中基本除去酸催化剂而获得；(B) 锂、钠、钾、铷或铯的氢氧化物或有机酸盐，或一种锍、碘或铵化合物；(C) 一种有机酸；以及 (D) 一种有机溶剂。含硅薄膜可以有效地将上覆的光刻胶薄膜图案化。该组合物能有效地减少光刻后图案缺陷的出现，并具有货架稳定性。
• Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2063319A1

  公开（公告）日：2009-05-27

  A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.

  一种含金属氧化物的薄膜由一种热固化组合物形成，该组合物包括：(A) 通过可水解硅化合物和可水解金属化合物之间的水解缩合获得的含金属氧化物化合物；(B) Li、Na、K、Rb 或 Cs 的氢氧化物或有机酸盐，或锍、碘或铵化合物；(C) 有机酸；以及 (D) 有机溶剂。含金属氧化物的薄膜可确保有效的图案形成。
• Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172807A1

  公开（公告）日：2010-04-07

  There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.

  本发明公开了一种用于形成含硅薄膜的热固性组合物，该组合物用于形成在光刻中使用的多层抗蚀剂工艺中形成的含硅薄膜，至少包括(A)通过使用酸作为催化剂水解和缩合可水解硅化合物而获得的含硅化合物，(B)热交联促进剂，(C)具有 1 至 30 个碳原子的一价或二价或更多有机酸，(D)三价或更多醇，以及(E)有机溶剂。本发明可以提供一种含硅薄膜的组合物，该组合物可以在光刻胶膜中形成良好的图案，可以形成用于蚀刻掩膜的含硅薄膜，该薄膜具有良好的耐干蚀刻性，可以提供良好的储存稳定性，并且可以用用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液进行分层，还可以提供一种在其上形成含硅薄膜的基底，以及进一步提供一种形成图案的方法。
• Patterning process and composition for forming silicon-containing film usable therefor
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2500775A2

  公开（公告）日：2012-09-19

  The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of:using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

  本发明提供了一种通过光刻法形成底片图案的制图工艺，至少包括以下步骤：使用含有特定含硅化合物（A）和有机溶剂（B）的用于形成含硅薄膜的组合物形成含硅薄膜；使用无硅抗蚀剂组合物在含硅薄膜上形成光刻胶膜；对光刻胶膜进行热处理，然后将光刻胶膜暴露于高能光束；以及使用含有有机溶剂的显影剂溶解光刻胶膜的未暴露区域，从而获得负图案。可以有一种图案化工艺，它是通过采用基于有机溶剂的显影来形成阴性抗蚀剂的最佳图案化工艺，以及在该工艺中使用的用于形成含硅薄膜的组合物。