5,8-Dihydroxynaphthalene-2-carbaldehyde | 1005001-38-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 5,8-Dihydroxynaphthalene-2-carbaldehyde
• 英文别名: 5,8-dihydroxynaphthalene-2-carbaldehyde
• CAS: 1005001-38-6
• 化学式: C₁₁H₈O₃
• 分子量: 188.183
• InChiKey: ZBNWVIKQUJCMBQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.9
• 重原子数：
  14
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  57.5
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  5,8-Dihydroxynaphthalene-2-carbaldehyde 在 air 作用下， 以 水 、 乙腈 为溶剂， 生成 6-formyl-1,4-naphthoquinone
  参考文献：
  名称：

  并五苯中间体通过 6,13-​​并五苯醌在水溶液中的正式分子内光氧化还原

  摘要：

  我们实验室发现的芳香酮在水溶液中的正式分子内光氧化还原反应（或串联光互变异构化）已扩展到许多苯醌。特别是，我们对光氧化还原反应是否可以应用于 2-(羟甲基)-6,13-​​并五苯醌 (4) 感兴趣，这将产生 2-甲酰基-6,13-​​二羟基并五苯 (10)，从而提供一种合成并五苯衍生物的光化学方法。虽然许多苯并苯醌表现出一系列的光氧化还原反应性，但 4 在酸性水溶液（pH < 3）中的光解导致分子内光氧化还原反应，通过烯醇中间体，产生 10（绿色化合物；Φ ~ 0.2，pH 1 )，它的反应性太强，无法通过标准的 ArOH 捕集剂（如乙酸酐）进行分离或捕集。

  DOI：

  10.1139/v07-117
• 作为产物：
  描述：

  6-(hydroxymethyl)-1,4-naphthoquinone 以 水 、 乙腈 为溶剂， 反应 0.08h， 生成 5,8-Dihydroxynaphthalene-2-carbaldehyde
  参考文献：
  名称：

  并五苯中间体通过 6,13-​​并五苯醌在水溶液中的正式分子内光氧化还原

  摘要：

  我们实验室发现的芳香酮在水溶液中的正式分子内光氧化还原反应（或串联光互变异构化）已扩展到许多苯醌。特别是，我们对光氧化还原反应是否可以应用于 2-(羟甲基)-6,13-​​并五苯醌 (4) 感兴趣，这将产生 2-甲酰基-6,13-​​二羟基并五苯 (10)，从而提供一种合成并五苯衍生物的光化学方法。虽然许多苯并苯醌表现出一系列的光氧化还原反应性，但 4 在酸性水溶液（pH < 3）中的光解导致分子内光氧化还原反应，通过烯醇中间体，产生 10（绿色化合物；Φ ~ 0.2，pH 1 )，它的反应性太强，无法通过标准的 ArOH 捕集剂（如乙酸酐）进行分离或捕集。

  DOI：

  10.1139/v07-117

文献信息

• Resist underlayer film composition and patterning process using the same
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2476713A1

  公开（公告）日：2012-07-18

  There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

  本发明公开了一种抗蚀剂底层薄膜组合物，其中该组合物含有至少由以下通式（1-1）和/或（1-2）表示的一种或多种化合物和以下通式（2-1）和/或（2-2）表示的一种或多种化合物和/或其等效体缩合而得的聚合物。可以提供一种底层膜组合物，特别是用于三层抗蚀工艺的底层膜组合物，该组合物可以形成反射率降低的底层膜（即作为抗反射膜具有最佳 n 值和 k 值的底层膜）、填充性能优异、图案抗弯曲性能高、蚀刻后尤其是在厚度小于 60 nm 的高纵横向线上不会出现掉线或晃动的底层膜，以及使用该底层膜组合物的图案化工艺。
• RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME
  申请人：OGIHARA Tsutomu

  公开号：US20120184103A1

  公开（公告）日：2012-07-19

  There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
• RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150248057A1

  公开（公告）日：2015-09-03

  A resist overlayer film forming composition that is used for a lithography process for manufacturing semiconductor devices, and selectively transmits EUV only, in particular, by blocking exposure light undesirable for EUV exposure, such as UV and DUV, without intermixing with a resist, and that can be developed with a developing solution after exposure. A resist overlayer film forming composition including: a hydroxyl group-containing novolac-based polymer containing a structure of (Formula 1-1): (in (Formula 1-1), Ar 1 is a divalent organic group that contains 1 to 3 benzene ring(s) and optionally contains a hydroxy group; Ar 2 is a benzene ring group, a naphthalene ring group, or an anthracene ring group; each of the hydroxy group and R 1 is a substituent for a hydrogen atom on a ring of Ar 2 ); and a solvent.
• US8853031B2
  申请人：——

  公开号：US8853031B2

  公开（公告）日：2014-10-07
• US9494864B2
  申请人：——

  公开号：US9494864B2

  公开（公告）日：2016-11-15