There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
本发明涉及一种由下列通式(1)所表示的磺鎵盐。在该式中,X和Y分别表示具有可聚合官能团的基团;Z表示具有1至33个碳原子的双价碳氢基团,可选含有杂原子;R1表示具有1至36个碳原子的双价碳氢基团,可选含有杂原子;R2和R3分别表示具有1至30个碳原子的单价碳氢基团,可选含有杂原子,或者R2和R3可以与该式中的
硫原子结合形成环。可以提供一种可用于抗蚀剂组合物的磺鎵盐,其在使用高能光源(例如ArF准分子激光器、EUV光和电子束)进行光刻时具有高分辨率和优异的LER,还可以提供从该磺鎵盐获得的聚合物、含有该聚合物的抗蚀剂组合物以及使用该抗蚀剂组合物进行图案化的方法。