申请人:Todd A. Michael
公开号:US20070032676A1
公开(公告)日:2007-02-08
Chemical vapor deposition processes result in films having low dielectric constants when suitable chemical precursors are utilized. Preferred chemical precursors include siloxanes, (fluoroalkyl)fluorosiloxanes, (fluoroalkyl)silanes, (alkyl)fluorosilanes, (fluoroalkyl)fluorosilanes, alkylsiloxysilanes, alkoxysilanes, alkylalkoxysilanes, silylmethanes, alkoxysilylmethanes, alkylalkoxysilylmethanes, alkoxymethanes, alkylalkoxymethanes, and mixtures thereof. The precursors are particularly suited to thermal CVD for producing low dielectric constant films at relatively low temperatures, particularly without the use of additional oxidizing agents. Such films are useful in the microelectronics industry.
化学气相沉积工艺使用适当的化学前体时,产生具有低介电常数的薄膜。首选的化学前体包括硅氧烷、(氟烷基)氟硅氧烷、(氟烷基)硅烷、(烷基)氟硅烷、(氟烷基)氟硅烷、烷基硅氧硅烷、烷氧硅烷、烷基烷氧硅烷、硅基甲烷、烷氧硅基甲烷、烷基烷氧硅基甲烷、烷氧甲烷、烷基烷氧甲烷及其混合物。这些前体特别适用于热化学气相沉积,可在相对较低的温度下生产低介电常数薄膜,特别是在不使用额外氧化剂的情况下。这种薄膜在微电子行业中非常有用。