4-sec-Butyl-2-methoxy-phenol | 110030-28-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 酚类
• 英文名称: 4-sec-Butyl-2-methoxy-phenol
• 英文别名: Phenol, 2-methoxy-4-(1-methylpropyl)-；4-butan-2-yl-2-methoxyphenol
• CAS: 110030-28-9
• 化学式: C₁₁H₁₆O₂
• 分子量: 180.247
• InChiKey: NZMDLYSPLDSXLQ-UHFFFAOYSA-N

物化性质

• 沸点：
  133-135 °C(Press: 14 Torr)
• 密度：
  1.0064 g/cm3

计算性质

• 辛醇/水分配系数(LogP)：
  2.6
• 重原子数：
  13
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  29.5
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  4-苄氧基-3-甲氧基苯乙酮 在 乙醚 、 乙基溴化镁 作用下， 生成 4-sec-Butyl-2-methoxy-phenol
  参考文献：
  名称：

  Fedeli et al., Gazzetta Chimica Italiana, 1959, vol. 89, p. 824,832

  摘要：

  DOI：

文献信息

• Catalytic activation of unstrained C(aryl)–C(aryl) bonds in 2,2′-biphenols
  作者：Jun Zhu、Jianchun Wang、Guangbin Dong

  DOI：10.1038/s41557-018-0157-x

  日期：2019.1

  install phosphinites as a recyclable directing group. Using hydrogen gas as the reductant, monophenols are obtained with a low catalyst loading and high functional group tolerance. This approach is also applied to the synthesis of 2,3,4-trisubstituted phenols. A further mechanistic study suggests that the C–C activation step is mediated by a rhodium(i) monohydride species. Finally, a preliminary study on

  过渡金属催化已成为C–C活化的重要手段，可以进行温和的选择性转化。但是，当前可以激活的C–C键的范围主要限于高应变系统或极性更大的C–C键。相比之下，非极性和未应变的C–C部分的催化活化仍未解决。在这里，我们报告了一种催化方法，用于催化2,2'-双酚中未应变的C（芳基）–C（芳基）键的活化。关键是利用苯酚部分作为手柄来安装次膦酸酯作为可循环的导向基团。使用氢气作为还原剂，可以获得具有低催化剂负载量和高官能团耐受性的单酚。该方法也适用于2,3,4-三取代的苯酚的合成。i）一氢化物种类。最后，说明了在木质素模型中破坏惰性双酚部分的初步研究。
• RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND
  申请人：KAMIMURA Sou

  公开号：US20090042124A1

  公开（公告）日：2009-02-12

  A resist composition includes (A) a compound represented by the following formula (I): wherein each of R 1 to R 13 independently represents a hydrogen atom or a substituent, provided that at least one of R 1 to R 13 is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X − represents an anion containing a proton acceptor functional group.

  一种抗性组合物包括(A)由以下公式（I）所代表的化合物：其中R1至R13中的每一个独立地代表氢原子或取代基，前提是R1至R13中至少有一个是含有醇羟基的取代基；Z代表单键或二价连接基团；X-代表含有质子受体功能基团的阴离子。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND COMPOUND
  申请人：FUJIFILM Corporation

  公开号：US20160280675A1

  公开（公告）日：2016-09-29

  The actinic ray-sensitive or radiation-sensitive resin composition includes a crosslinking agent having a polarity converting group and an alkali-soluble resin, in which the polarity converting group is a group capable of decomposing by the action of an alkaline aqueous solution to generate a carboxylic acid or sulfonic acid on the side having a crosslinking group.

  感光树脂或辐射敏感树脂组合物包括具有极性转换基团和可溶于碱性树脂的交联剂，其中极性转换基团是一种能够通过碱性水溶液作用分解并在具有交联基团的侧面生成羧酸或磺酸的基团。
• POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
  申请人：HIRANO Shuji

  公开号：US20080248419A1

  公开（公告）日：2008-10-09

  A positive resist composition, includes: (A) a resin that has a group having absorption at 248 nm at a main chain terminal of the resin (A), and a pattern forming method uses the composition.

  一种正性光刻胶组合物，包括：（A）一种具有在树脂（A）的主链端具有在248nm处吸收的基团的树脂，并且使用该组合物进行图案形成的方法。
• POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION
  申请人：Takahashi Hidenori

  公开号：US20110183258A1

  公开（公告）日：2011-07-28

  A positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin capable of increasing the solubility in an alkali developer by the action of an acid, and (C) a compound having a specific structure, which decomposes by the action of an acid to generate an acid, a pattern forming method using the positive resist composition, and a compound for use in the positive resist composition are provided as a positive resist composition exhibiting good performance in terms of pattern profile, line edge roughness, pattern collapse, sensitivity and resolution in normal exposure (dry exposure), immersion exposure and double exposure, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition.

  本发明提供了一种正性光阻组合物，包括（A）一种在与光致发色剂或辐射照射时能够产生酸的化合物，（B）一种树脂，能够通过酸的作用增加在碱性显影剂中的溶解度，以及（C）一种具有特定结构的化合物，能够通过酸的作用分解产生酸。该正性光阻组合物在正常曝光（干曝光）、浸没曝光和双重曝光中表现出良好的图案形貌、线边粗糙度、图案坍塌、灵敏度和分辨率性能。同时，本发明提供了一种使用该正性光阻组合物的图案形成方法以及用于该正性光阻组合物的化合物。