tetrabutyl ammonium hydroxide | 137024-33-0

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: tetrabutyl ammonium hydroxide
• 英文别名: N,N-dibutylbutan-1-amine;hydrate
• CAS: 137024-33-0
• 化学式: C₁₂H₂₇N*H₂O
• 分子量: 203.368
• InChiKey: NVTNQIBQPLGHGE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.09
• 重原子数：
  14
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  5.4
• 氢给体数：
  2
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  tetrabutyl ammonium hydroxide 、 hyaluronic acid 生成 tetrabutylammonium salt of hyaluronic acid
  参考文献：
  名称：

  摘要：

  DOI：

文献信息

• SYNTHESIS OF INTERMEDIATES FOR PRODUCING PROSTACYCLIN DERIVATIVES
  申请人：United Therapeutics Corporation

  公开号：US20160107973A1

  公开（公告）日：2016-04-21

  The present disclosure provides regioselective methods for synthesizing intermediates useful in making prostacyclin derivatives, such as treprostinil.

  本公开提供了用于合成中间体的区域选择性方法，这些中间体在制备前列环素衍生物（如曲普罗斯汀）中非常有用。
• METHOD FOR PRODUCING POLYHYDRIC PHENOL
  申请人：Kitagawa Hideo

  公开号：US20120046498A1

  公开（公告）日：2012-02-23

  The present invention is a method for producing a polyhydric phenol, including the following steps (a) to (d): (a) a first step of producing (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexcene- 1 -one from 2-deoxy-scyllo-inosose by a dehydration reaction; (b) a second step of producing 1,2,4-trihydroxybenzene from the (4S,5R,6S)-4,5,6-trihydroxy-2-cyclohexene- 1 -one obtained in the first step by a dehydration reaction; (c) a third step of producing 4-hydroxycyclohexane-1,3-dione from the 1,2,4-trihydroxybenzene by a catalytic hydrogenation reaction with the use of a metal catalyst; and (d) a fourth step of producing hydroquinone by heating the 4-hydroxycyclohexane-1,3-dione.

  本发明涉及一种生产多羟基苯酚的方法，包括以下步骤（a）至（d）：（a）第一步，通过脱水反应从2-去氧-赤藓糖生成（4S，5R，6S）-4,5,6-三羟基-2-环己烯-1-酮；（b）第二步，通过脱水反应从第一步得到的（4S，5R，6S）-4,5,6-三羟基-2-环己烯-1-酮生成1,2,4-三羟基苯；（c）第三步，使用金属催化剂进行催化氢化反应，从1,2,4-三羟基苯生成4-羟基环己烷-1,3-二酮；（d）第四步，通过加热4-羟基环己烷-1,3-二酮生成对苯二酚。
• Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
  申请人：Rantala T. Juha

  公开号：US20060131753A1

  公开（公告）日：2006-06-22

  An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm 3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm 3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

  提供了一种集成电路，包括基底和电气绝缘和电气导体材料的离散区域，其中电气绝缘材料是一种混合有机-无机材料，具有1.45克/厘米3或更高的密度和3.0或更低的介电常数。该集成电路可以通过以下方法制造：提供基底；在基底上形成电气绝缘和电气导体材料的离散区域；其中电气绝缘材料在基底上沉积后，在350℃或更低的温度下加热；并且在致密化后，电气绝缘材料具有1.45克/厘米3或更高的密度。还公开了一种制造集成电路的方法，包括使用电气导体材料和介电材料执行双刻蚀法，其中介电材料是直接光图案化的混合有机-无机材料。
• Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits
  申请人：——

  公开号：US20040002617A1

  公开（公告）日：2004-01-01

  A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R 1 R 2 R 3 SiR 4 , wherein R 1 , R 2 , R 3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R 4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R 1 R 2 R 4 MR 5 , wherein R 1 , R 2 and R 4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R 1 , R 2 and R 4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R 5 is either an alkoxy group, OR 3 , or a halogen (X).

  本发明公开了一种制造集成电路的方法，包括在基板上沉积交替区域的电导材料和混合有机无机介电材料，其中通过水解多种前体物质形成由硅氧骨架组成并具有有机取代基结合的混合有机无机材料形成介电材料区域，然后在基板上沉积混合有机无机材料，去除所选区域的混合有机无机材料，并在所选区域沉积电导材料，其中前体物质之一是具有一般式R1R2R3SiR4的化合物，其中R1、R2、R3分别与Si结合，并且独立地是芳基、交联基或具有1-14个碳的烷基，而R4选自具有烷氧基、酰氧基、—OH基或卤素的群。本发明还公开了一种在基板上形成混合有机无机层的方法，包括将一种选择自四烷氧基硅烷、三烷氧基硅烷、三氯硅烷、二烷氧基硅烷和二氯硅烷的硅烷与一种具有一般式R1R2R4MR5的化合物水解，其中R1、R2和R4独立地是芳基、烷基、烯基、环氧基或炔基，其中至少有一个R1、R2和R4是完全或部分氟化的，M选自周期表第14族元素，而R5是烷氧基、OR3或卤素（X）。
• Dielectric materials and methods for integrated circuit applications
  申请人：Rantala T. Juha

  公开号：US20050032357A1

  公开（公告）日：2005-02-10

  An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

  提供一种集成电路器件，其具有基底和电绝缘和电导材料区域，其中电绝缘材料是一种混合有机-无机材料，不需要或最小限度需要CMP，并且可以承受450°C或更高温度下的后续加工步骤。