3,5-Dimethyl-2,4,6-tris-hydroxymethyl-phenol | 22002-39-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 酚类
• 英文名称: 3,5-Dimethyl-2,4,6-tris-hydroxymethyl-phenol
• 英文别名: 2,4,6-Tris-hydroxymethyl-3,5-dimethyl-phenol；2,4,6-Tris(hydroxymethyl)-3,5-dimethylphenol
• CAS: 22002-39-7
• 化学式: C₁₁H₁₆O₄
• 分子量: 212.246
• InChiKey: MMUJNLZJXLQATG-UHFFFAOYSA-N

物化性质

• 沸点：
  414.2±40.0 °C(Predicted)
• 密度：
  1.311±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  0.2
• 重原子数：
  15
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  80.9
• 氢给体数：
  4
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  聚合甲醛 、 3,5-二甲基苯酚 在 sodium hydroxide 作用下， 生成 3,5-Dimethyl-2,4,6-tris-hydroxymethyl-phenol
  参考文献：
  名称：

  DE960463

  摘要：

  公开号：

文献信息

• Novolac resin-containing resist underlayer film-forming composition using bisphenol aldehyde
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10017664B2

  公开（公告）日：2018-07-10

  Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent. Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

  用于形成具有高干法蚀刻抗性、抗扭曲性并具有良好的平整性和嵌入性能的抗蚀底层膜形成组合物，包括通过使含有芳香环的有机化合物A和至少具有两个含酚羟基的芳香烃环团的醛B反应而获得的树脂，并具有芳香烃环团通过三级碳原子键合的结构。醛B可以是化合物的化学式（1）： 所得的树脂可能具有化学式（2）的单元结构： Ar1和Ar2各自是C6-40芳基团。含有芳香环的有机化合物A可能是芳香胺或含酚羟基的化合物。该组合物可能进一步含有溶剂、酸和/或酸发生剂，或交联剂。用于半导体生产的形成抗蚀图案，包括通过将抗蚀底层膜形成组合物涂覆在半导体衬底上并对其进行烘烤来形成抗蚀底层膜。
• SILOXANE-BASED RESIN COMPOSITION
  申请人：Suwa Mitsuhito

  公开号：US20100316953A1

  公开（公告）日：2010-12-16

  The present invention is a siloxane-based resin composition including a siloxane-based resin and an imidosilane compound having a specific structure. Moreover, the present invention is a siloxane-based resin composition including a siloxane-based resin which is a reactive product to be obtained by hydrolyzing an alkoxysilane compound and an imidosilane compound having a specific structure and then making the resulting hydrolysate undergo a condensation reaction. According to the present invention, it is possible to form a cured film excellent in adhesion.

  本发明是一种基于硅氧烷的树脂组合物，包括一种基于硅氧烷的树脂和一种具有特定结构的亚氨基硅烷化合物。此外，本发明还是一种基于硅氧烷的树脂组合物，包括一种基于硅氧烷的树脂，该树脂是通过水解烷氧基硅烷化合物和具有特定结构的亚氨基硅烷化合物反应产生的反应产物，然后使所得到的水解产物经历缩合反应而得到的。根据本发明，可以形成具有优异附着力的固化膜。
• NOVOLAC RESIN-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION USING BISPHENOL ALDEHYDE
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20160068709A1

  公开（公告）日：2016-03-10

  Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar 1 and Ar 2 each are C 6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent. Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

  高干法蚀刻抗性、抗扭曲性、并对不平整部分表现出良好的平整和嵌入性的抗阻层薄膜形成组合物，包括通过反应含芳香环的有机化合物A和至少有两个芳香族碳环环团且具有酚羟基的醛B所获得的树脂，并具有芳香族碳环环团通过三级碳原子键合的结构。醛B可以是化合物式（1）的化合物：所获得的树脂可以具有式（2）的单元结构：其中Ar1和Ar2各自是C6-40芳基团。含芳香环的有机化合物A可以是芳香胺或含酚羟基的化合物。该组合物还可以含有溶剂、酸和/或酸发生剂，或交联剂。用于半导体生产的形成光刻图形，包括将抗阻层薄膜形成组合物涂覆在半导体基板上并烘烤以形成抗阻层薄膜。
• Novel polyimide silicone, photosensitive resin composition containing the novel polyimide silicone, and method for pattern formation
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2228400A1

  公开（公告）日：2010-09-15

  A polyimide silicone having in the molecule a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group is provided. The polyimide silicone comprises the unit represented by the formula (1): wherein X is a tetravalent group at least a part of which is a tetravalent organic group represented by the formula (2): wherein R1 is a monovalent hydrocarbon group, R2 is a trivalent group, and n is an integer of 1 to 120 on average; and Y is a divalent organic group at least a part of which is a divalent organic group having a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group represented by the formula (3): wherein R3 and R4 are a hydrogen atom or an alkyl group, and R5 is an alkyl group, an aryl group, or an aralkyl group. R3 and R4, R3 and R5, or R4 and R5 may be bonded to each other to form a ring together with the carbon atom or the carbon atom and the oxygen atom to which they are bonded with the proviso that the R3, R4, and R5 are independently an alkylene group.

  本发明提供了一种聚酰亚胺硅氧烷，其分子中的酚羟基部分或全部氢原子被酸性基团取代。该聚酰亚胺有机硅由式（1）所代表的单元组成： 其中 X 是四价基团，至少其中一部分是由式（2）表示的四价有机基团： 其中 R1 是一价烃基，R2 是三价基，n 是平均为 1 至 120 的整数；Y 是二价有机基团，其中至少有一部分是具有酚羟基的二价有机基团，该酚羟基中的部分或全部氢原子被式（3）所代表的易酸基团取代： 其中 R3 和 R4 是氢原子或烷基，R5 是烷基、芳基或芳烷基。R3 和 R4、R3 和 R5 或 R4 和 R5 可以相互键合，与碳原子或碳原子和氧原子一起形成一个环，但 R3、R4 和 R5 必须是独立的亚烷基。
• Resist underlayer film-forming composition containing polymer having arylene group
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10394124B2

  公开（公告）日：2019-08-27

  A resist underlayer film-forming composition for lithography process having characteristics of enabling wafer surface planarization after film formation, excellent planarization performance on substrate with level difference, and good embeddability in fine hole pattern. The resist underlayer film-forming composition including polymer having unit structure of Formula (1) and solvent, wherein each of R1 to R4 is independently hydrogen atom or methyl group, and X1 is divalent organic group having at least one arylene group optionally substituted by alkyl group, amino group, or hydroxyl group, and wherein X1 in Formula (1) is organic group of Formula (2), wherein A1 is phenylene group or naphthylene group, A2 is phenylene group, naphthylene group, or organic group of Formula (3), and dotted line is bond, and wherein each of A3 and A4 is independently phenylene group or naphthylene group, and dotted line is bond.

  一种用于光刻工艺的抗蚀剂底层成膜组合物，其特点是成膜后可使晶片表面平整化，在有水平差异的基底上具有优异的平整化性能，以及在细孔图案中具有良好的嵌入性。光刻胶底层成膜组合物包括具有式（1）单元结构的聚合物和溶剂、 其中 R1 至 R4 各自独立地为氢原子或甲基，X1 为二价有机基团，其中至少有一个芳烯基团可选地被烷基、氨基或羟基取代，且式（1）中的 X1 为式（2）的有机基团、 其中 A1 为亚苯基或萘基，A2 为亚苯基、萘基或式 (3) 的有机基团，虚线为键，以及 其中 A3 和 A4 各自独立地为亚苯基或亚萘基，虚线为键。