N-(ur-2-ylmethyl)cyclopentanamine

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: N-(ur-2-ylmethyl)cyclopentanamine
• 英文别名: N-cyclopentylfurfurylamine；N-(furan-2-ylmethyl)cyclopentanamine
• 化学式: C₁₀H₁₅NO
• mdl: MFCD03724766
• 分子量: 165.235
• InChiKey: QTSNVDAUJAGULA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  12
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.6
• 拓扑面积：
  25.2
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  N-(ur-2-ylmethyl)cyclopentanamine 在 benzotriazol-1-yloxyl-tris-(pyrrolidino)-phosphonium hexafluorophosphate 、 N,N-二异丙基乙胺 、 三氟乙酸 作用下， 以 二氯甲烷 、 N,N-二甲基甲酰胺 为溶剂， 反应 19.0h， 生成 7-amino-N-cyclopentyl-N-(furan-2-ylmethyl)heptanamide
  参考文献：
  名称：

  新型烟酰胺磷酸核糖转移酶抑制剂的合成及构效关系，对实体癌和血液癌具有抗肿瘤活性

  摘要：

  癌细胞高度依赖烟酰胺磷酸核糖基转移酶 (NAMPT) 活性进行增殖，因此 NAMPT 代表了抗癌药物开发的一个有趣靶点。FK866 和 CHS828 等几种化合物被确定为具有强抗癌活性的强效 NAMPT 抑制剂，尽管它们都没有达到临床试验的后期阶段。我们在此展示了三个新抑制剂库的制备，这些抑制剂包含 (pyridin-3-yl)triazole、(pyridin-3-yl)thiourea 和 (pyridin-3/4-yl)cyanoguanidine 作为帽/连接单元和呋喃基化合物的尾部位置。体外抗增殖活性在一组实体和血液癌细胞系上进行了评估，大多数合成化合物在 MiaPaCa-2（胰腺癌）、ML2（急性髓系白血病）、JRKT（急性淋巴细胞白血病）、NMLW 中显示出纳摩尔或亚纳摩尔的细胞毒活性（Burkitt 淋巴瘤）、RPMI8226（多发性骨髓瘤）和 NB4（急性髓性白血病），IC

  DOI：

  10.1016/j.ejmech.2023.115170
• 作为产物：
  描述：

  糠醛 、 环戊胺 在 三乙酰氧基硼氢化钠 作用下， 以 二氯甲烷 为溶剂， 以42%的产率得到N-(ur-2-ylmethyl)cyclopentanamine
  参考文献：
  名称：

  三嗪腈对半胱氨酸蛋白酶人类组织蛋白酶L的抑制作用：酰胺S3口袋中的酰胺····杂芳烃π-堆积相互作用和硫属元素键合。

  摘要：

  我们报道了半胱氨酸蛋白酶人组织蛋白酶L（hCatL）的三嗪腈配体的广泛的“杂芳烃扫描”，以研究S3口袋入口处的肽酰胺键Gly67–Gly68上的π堆积。杂芳基·····肽键的堆叠由咪唑并吡啶配体与hCatL的共晶体结构支持。抑制常数（ķ我）受到杂环的多样性和与S3口袋局部环境的特定相互作用的强烈影响。结合亲和力变化三个数量级。与烃类似物相比，所有杂芳族配体均具有增强的结合力。从杂芳烃和肽键的局部偶极矩的方向预测的能量贡献无法得到证实。分子间的C-S⋅⋅⋅O= C相互作用（硫族元素键）与Asn66的主链C = O增强了苯并噻吩基（K i = 4 n m）和苯并噻唑基（K i = 17 n m）配体的结合。 S3口袋。还测试了配体的相关酶罗德沙星。

  DOI：

  10.1002/cmdc.201600563

文献信息

• Experimental and Theoretical Analysis of the Thiol-Promoted Fragmentation of 2-Halo-3-tosyl-oxanorbornadienes
  作者：Marina Carranza、Ana T. Carmona、Claudio D. Navo、Inmaculada Robina、Simone Fratta、Carlos Newburn、Gonzalo Jiménez-Osés、Antonio J. Moreno-Vargas

  DOI：10.1021/acs.orglett.3c02548

  日期：2023.10.20

  ienes are able to accept two thiol molecules through an initial nucleophilic substitution, giving isolable oxabicyclic thiovinyl sulfones that, subsequently, can react with a second thiol molecule via thio-Michael addition. The resulting oxanorbornenic thioketals undergo retro-Diels–Alder (rDA) fragmentation to release a furan derivative and a ketene S,S-acetal. The substitution pattern of the oxanorbornadienic

  2-卤代-3-甲苯磺酰基-氧杂降冰片二烯能够通过初始亲核取代接受两个硫醇分子，产生可分离的氧杂双环硫乙烯基砜，随后可以通过硫代迈克尔加成与第二个硫醇分子反应。所得的氧杂降冰片硫缩酮经过逆狄尔斯-阿尔德 (rDA) 裂解，释放出呋喃衍生物和乙烯酮S , S-缩醛。氧杂降冰片二烯骨架的取代模式通过量子力学计算检查的电子和空间因素影响 rDA 的速率。
• Compositions for the filling of high aspect ratio vertical interconnect access (VIA) holes
  申请人：Heraeus Precious Metals North America Conshohocken LLC

  公开号：US11289238B2

  公开（公告）日：2022-03-29

  A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent-free electroconductive composition is generally made of about 40 to about 95 wt % of a conductive component, about 4 to about 30 wt % of a polymer or oligomer comprising a reactive functional group, up to about 20 wt % of a monomeric diluent comprising a reactive functional group, and up to about 3 wt % of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt % of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.

  无溶剂导电组合物可用于在基材表面制作导电线或在基材通孔内制作导电塞。无溶剂导电组合物一般由约 40 至约 95 wt % 的导电成分、约 4 至约 30 wt % 含有活性官能团的聚合物或低聚物、最多约 20 wt % 含有活性官能团的单体稀释剂和最多约 3 wt % 的固化剂组成。在某些情况下，无溶剂导电组合物还包括最多约 3 wt % 的润滑化合物。使用无溶剂导电组合物制成的基板可用于印刷电路板、集成电路、太阳能电池、电容器、电阻器、热敏电阻器、压敏电阻器、谐振器、传感器、电感器和多层铁氧体磁珠。
• COMPOSITIONS FOR THE FILLING OF HIGH ASPECT RATIO VERTICAL INTERCONNECT ACCESS (VIA) HOLES
  申请人：Heraeus Precious Metals North America Conshohocken LLC.

  公开号：US20210174983A1

  公开（公告）日：2021-06-10

  A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent-free electroconductive composition is generally made of about 40 to about 95 wt % of a conductive component, about 4 to about 30 wt % of a polymer or oligomer comprising a reactive functional group, up to about 20 wt % of a monomeric diluent comprising a reactive functional group, and up to about 3 wt % of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt % of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.
• [EN] COMPOSITIONS FOR THE FILLING OF HIGH ASPECT RATIO VERTICAL INTERCONNECT ACCESS (VIA) HOLES<br/>[FR] COMPOSITIONS POUR LE REMPLISSAGE DE TROUS D'ACCÈS D'INTERCONNEXION VERTICALE (VIA) À RAPPORT D'ASPECT ÉLEVÉ
  申请人：HERAEUS PRECIOUS METALS NORTH AMERICA CONSHOHOCKEN LLC

  公开号：WO2021112933A1

  公开（公告）日：2021-06-10

  A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent- free electroconductive composition is generally made of about 40 to about 95 wt% of a conductive component, about 4 to about 30 wt% of a polymer or oligomer comprising a reactive functional group, up to about 20 wt% of a monomeric diluent comprising a reactive functional group, and up to about 3 wt% of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt% of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.