1-(9H-fluoren-9-yl)-4-aza-1-azoniabicyclo[2.2.2]octane

• 分子结构分类: 有机化合物 - 苯类化合物 - 芴
• 英文名称: 1-(9H-fluoren-9-yl)-4-aza-1-azoniabicyclo[2.2.2]octane
• 化学式: C19H21N2+
• 分子量: 277.4
• InChiKey: HGYRBRMHJJRSOT-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  21
• 可旋转键数：
  1
• 环数：
  6.0
• sp3杂化的碳原子比例：
  0.37
• 拓扑面积：
  3.2
• 氢给体数：
  0
• 氢受体数：
  1

文献信息

• METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN
  申请人：Shimizu Daisuke

  公开号：US20100233635A1

  公开（公告）日：2010-09-16

  A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

  一种形成图案的方法包括：（1）在基板上形成一个底层薄膜，该底层薄膜包含（A）一种辐射敏感的酸发生剂，能够在辐射射线的作用下产生酸，或者（B）一种辐射敏感的碱发生剂，能够在辐射射线的作用下产生碱；（2）通过一个预定图案的掩模，用辐射射线照射底层薄膜，以获得已通过预定图案选择性暴露的底层薄膜部分；（3）在底层薄膜上形成一层有机薄膜，以实现暴露的底层薄膜部分与形成在暴露的底层薄膜部分上的有机薄膜的化学键合；（4）去除除暴露的底层薄膜部分外的底层薄膜区域上形成的有机薄膜。
• THIN FILM TRANSISTOR SUBSTRATE
  申请人：FUKUDA Shunji

  公开号：US20130126860A1

  公开（公告）日：2013-05-23

  A main object of the present invention is to provide a TFT substrate having excellent switching characteristics. The object is attained by providing a thin film transistor substrate comprising: a substrate, and a thin film transistor having an oxide semiconductor layer that is formed on the substrate and is formed from an oxide semiconductor, and a semiconductor layer-adjoining insulating layer formed to be in contact with the oxide semiconductor layer, wherein at least one semiconductor layer-adjoining insulating layer included in the thin film transistor is a photosensitive polyimide insulating layer formed by using a photosensitive polyimide resin composition.

  本发明的主要目的是提供一种具有优异开关特性的TFT基板。该目标通过提供一种薄膜晶体管基板来实现，该基板包括：基板和薄膜晶体管，所述薄膜晶体管具有在基板上形成的氧化物半导体层，该氧化物半导体层由氧化物半导体形成，并且与氧化物半导体层接触的半导体层相邻的绝缘层，其中，在薄膜晶体管中包括的至少一个半导体层相邻的绝缘层是使用光敏聚酰亚胺树脂组合物形成的光敏聚酰亚胺绝缘层来实现的。
• US8173348B2
  申请人：——

  公开号：US8173348B2

  公开（公告）日：2012-05-08