5,12-Bis(methylthio)tetracene (2) and 5,11-bis(methylthio)tetracene (3) were synthesized. DFT calculations indicate that the HOMO and LUMO energy levels of 2 and 3 are lowered by 0.13–0.24 eV and their HOMO–LUMO energy gaps are reduced by 0.1 eV relative to those of tetracene. X-ray crystallographic data revealed that 2 is arranged as a result of a 1-D slipped-cofacial π-stacking with S–S and S−π interactions
合成了5,12-双(甲硫基)并四苯(2)和5,11-双(甲硫基)并四苯(3)。DFT计算表明,相对于并四苯,HOMO和LUMO的2和3能级降低了0.13-0.24 eV,它们的HOMO-LUMO能隙降低了0.1 eV。X射线晶体学数据表明,2是由于一维滑动面π堆积而具有S–S和S-π相互作用而排列的,类似于6,13-双(甲硫基)并五苯的堆积排列(1),而3则显示出人字形的排列方式,而没有S–S相互作用。使用可溶1和1的旋涂膜制造的OFET器件2,具有底接触装置的配置,展出空穴迁移率高达1.3×10 -2和4.0×10 -2厘米2 V -1小号-1与当前的开/关的10比5和10 4分别。