4-[[4-[bis(2-hydroxyethyl)amino]phenyl]diazenyl]-1-(4-phosphonobenzyl)pyridinium bromide | 1142953-11-4

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: 4-[[4-[bis(2-hydroxyethyl)amino]phenyl]diazenyl]-1-(4-phosphonobenzyl)pyridinium bromide
• 英文别名: [4-[[4-[[4-[Bis(2-hydroxyethyl)amino]phenyl]diazenyl]pyridin-1-ium-1-yl]methyl]phenyl]phosphonic acid;bromide；[4-[[4-[[4-[bis(2-hydroxyethyl)amino]phenyl]diazenyl]pyridin-1-ium-1-yl]methyl]phenyl]phosphonic acid;bromide
• CAS: 1142953-11-4
• 化学式: Br*C₂₂H₂₆N₄O₅P
• 分子量: 537.35
• InChiKey: YAENPFHQFQOXKQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.96
• 重原子数：
  33
• 可旋转键数：
  10
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.23
• 拓扑面积：
  130
• 氢给体数：
  4
• 氢受体数：
  9

反应信息

• 作为产物：
  描述：

  对甲苯磷酸二乙酯 在 N-溴代丁二酰亚胺(NBS) 、 偶氮二异丁腈 、 三甲基溴硅烷 作用下， 以 四氯化碳 、 二氯甲烷 为溶剂， 反应 8.0h， 生成 4-[[4-[bis(2-hydroxyethyl)amino]phenyl]diazenyl]-1-(4-phosphonobenzyl)pyridinium bromide
  参考文献：
  名称：

  Solution-Deposited Organic–Inorganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors

  摘要：

  We report here on the rational synthesis, processing, and dielectric properties of novel layer-by-layer organic/inorganic hybrid multilayer dielectric films enabled by polarizable pi-electron phosphonic acid building blocks and ultrathin ZrO2 layers. These new zirconia-based self-assembled nanodielectric (Zr-SAND) films (5-12 nm thick) are readily fabricated via solution processes under ambient atmosphere. Attractive Zr-SAND properties include amenability to accurate control of film thickness, large-area uniformity, well-defined nanostructure, exceptionally large electrical capacitance (up to 750 nF/cm(2)), excellent insulating properties (leakage current densities as low as 10(-7) A/cm(2)), and excellent thermal stability. Thin-film transistors (TFTs) fabricated with pentacene and PDIF-CN2 as representative organic semiconductors and zinc-tin-oxide (Zn-Sn-O) as a representative inorganic semiconductor function well at low voltages (<+/- 4.0 V). Furthermore, the TFT performance parameters of representative organic semiconductors deposited on Zr-SAND films, functionalized on the surface with various alkylphosphonic acid self-assembled monolayers, are investigated and shown to correlate closely with the alkylphosphonic acid chain dimensions.

  DOI：

  10.1021/ja202755x

文献信息

• Solution-Deposited Organic–Inorganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors
  作者：Young-geun Ha、Jonathan D. Emery、Michael J. Bedzyk、Hakan Usta、Antonio Facchetti、Tobin J. Marks

  DOI：10.1021/ja202755x

  日期：2011.7.6

  We report here on the rational synthesis, processing, and dielectric properties of novel layer-by-layer organic/inorganic hybrid multilayer dielectric films enabled by polarizable pi-electron phosphonic acid building blocks and ultrathin ZrO2 layers. These new zirconia-based self-assembled nanodielectric (Zr-SAND) films (5-12 nm thick) are readily fabricated via solution processes under ambient atmosphere. Attractive Zr-SAND properties include amenability to accurate control of film thickness, large-area uniformity, well-defined nanostructure, exceptionally large electrical capacitance (up to 750 nF/cm(2)), excellent insulating properties (leakage current densities as low as 10(-7) A/cm(2)), and excellent thermal stability. Thin-film transistors (TFTs) fabricated with pentacene and PDIF-CN2 as representative organic semiconductors and zinc-tin-oxide (Zn-Sn-O) as a representative inorganic semiconductor function well at low voltages (<+/- 4.0 V). Furthermore, the TFT performance parameters of representative organic semiconductors deposited on Zr-SAND films, functionalized on the surface with various alkylphosphonic acid self-assembled monolayers, are investigated and shown to correlate closely with the alkylphosphonic acid chain dimensions.