DNp-DTT | 1263302-93-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: DNp-DTT
• 英文别名: [10-(Naphthalene-2-carbonyl)-3,7,11-trithiatricyclo[6.3.0.02,6]undeca-1(8),2(6),4,9-tetraen-4-yl]-naphthalen-2-ylmethanone；[10-(naphthalene-2-carbonyl)-3,7,11-trithiatricyclo[6.3.0.02,6]undeca-1(8),2(6),4,9-tetraen-4-yl]-naphthalen-2-ylmethanone
• CAS: 1263302-93-7
• 化学式: C₃₀H₁₆O₂S₃
• 分子量: 504.654
• InChiKey: FYRDGFSTLCUFIF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  9.7
• 重原子数：
  35
• 可旋转键数：
  4
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  119
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  二噻吩[3,2-B:2',3'-D]噻吩 、 2-萘甲酰氯 在 aluminum (III) chloride 作用下， 以 二硫化碳 为溶剂， 反应 72.0h， 以30%的产率得到DNp-DTT
  参考文献：
  名称：

  Functionalized dithieno[2,3-b:3′,2′-d]thiophenes (DTTs) for organic thin-film transistors

  摘要：

  A series of dithieno[2,3-b:3',2'-d]thiophene (DTT;1) derivatives were synthesized and characterized. Facile, one-pot [2 + 1] and [1 + 1 + 1] synthetic methods of DTT were developed, which enabled the efficient realization of a new DTT-based semiconductor series for organic thin-film transistors (OTFTs). These DTTs are end-functionalized with perfluorophenyl (FP-), perfluorobenzoyl (FB-), benzoyl (B-), 2-naphthylcarbonyl (Np-), 2-benzothiazolyl (BS-), 2-thienylcarbonyl (T-), and 2-(5-hexyl)thienylcarbonyl (HT-) groups. The molecular structures of DFP-DTT (3), DFB-DTT (4), FBB-DTT (5), DB-DTT (6), and DNp-TT (7) were determined via single-crystal X-ray diffraction. Our studies reveal that the majority of these carbonyl-containing derivatives exhibit p-channel transport with hole mobilities of up to 0.01 cm(2)/Vs for DB-DTT and DBS-DTT, while perfluorobenzoyl and perfluorophenyl-substituted compounds exhibit n-channel transport with mobilities up to 0.002 cm(2)/Vs for DFB-DTT, 0.03 cm(2)/Vs for FBB-DTT, and 0.07 cm(2)/Vs for DFP-DTT, rendering the latter the DTT derivative currently having the highest electron mobility in OTFT devices. Within this family, the carrier mobility values are strongly dependent upon the semiconductor growth temperature and the dielectric surface treatment. (C) 2010 Elsevier B. V. All rights reserved.

  DOI：

  10.1016/j.orgel.2010.01.022