Perfluoropentacene: High-Performance p−n Junctions and Complementary Circuits with Pentacene
摘要:
We report the synthesis and characterization of perfluoropentacene as an n-type semiconductor for organic field-effect transistors (OFETs). Perfluoropentacene is a planar and crystalline material that adopts a herringbone structure as observed for pentacene. OFETs with perfluoropentacene were constructed using top-contact geometry, and an electron mobility of 0.11 cm2 V-1 s-1 was observed. Bipolar OFETs with perfluoropentacene and pentacene function at both negative and positive gate voltages. The improved p-n junctions are probably due to the similar d-spacings of both acenes. Complementary inverter circuits were fabricated, and the transfer characteristics exhibit a sharp inversion of the output signal with a high-voltage gain.
Fluorinated pentacene derivative and method of producing same
申请人:Kobayashi Masafumi
公开号:US20070083067A1
公开(公告)日:2007-04-12
Fluorinated pentacene derivatives, for example, the novel compounds tetradecafluoropentacene, 5,6,7,12,13,14-hexafluoropentacene, 5,7,12,14-tetrafluoropentacene, and 6,13-difluoropentacene, and intermediates therefor are provided. And a method of producing fluorinated pentacene derivatives and intermediates therefor is also provided. Pentacene derivatives fluorinated at desired positions of the pentacene skeleton are obtained by introducing the oxo group, hydroxyl group, or alkoxyl group into the pentacene skeleton followed by fluorination with sulfur tetrafluoride and partial defluorination using a reducing agent.
We report the synthesis and characterization of perfluoropentacene as an n-type semiconductor for organic field-effect transistors (OFETs). Perfluoropentacene is a planar and crystalline material that adopts a herringbone structure as observed for pentacene. OFETs with perfluoropentacene were constructed using top-contact geometry, and an electron mobility of 0.11 cm2 V-1 s-1 was observed. Bipolar OFETs with perfluoropentacene and pentacene function at both negative and positive gate voltages. The improved p-n junctions are probably due to the similar d-spacings of both acenes. Complementary inverter circuits were fabricated, and the transfer characteristics exhibit a sharp inversion of the output signal with a high-voltage gain.
Perfluoropentacene and Perfluorotetracene: Syntheses, Crystal Structures, and FET Characteristics