N,N-二甲基氨基乙氧化锌 | 51223-30-4

• 分子结构分类: 有机化合物 - 有机氮化合物
• 中文名称: N,N-二甲基氨基乙氧化锌
• 英文名称: ZINC N,N-dimethylaminoethoxide
• 英文别名: zinc;2-(dimethylamino)ethanolate
• CAS: 51223-30-4
• 化学式: C8H20N2O2Zn
• 分子量: 241.6
• InChiKey: IXPVQSACNVOCSR-UHFFFAOYSA-N

物化性质

• 沸点：
  170°C 0mm

计算性质

• 辛醇/水分配系数(LogP)：
  -2.19
• 重原子数：
  13
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

安全信息

• TSCA：
  No
• 安全说明：
  S26,S36/37/39
• 危险类别码：
  R36/37/38

文献信息

• ORGANIC-INORGANIC HYBRID MATERIAL COMPOSITIONS AND POLYMER COMPOSITES
  申请人：WANG Zhikai

  公开号：US20140128495A1

  公开（公告）日：2014-05-08

  A method for the preparation of an organic-inorganic hybrid composition is performed through three major steps. In addition, a product is generated from this organic-inorganic hybrid composition. In step one, a series of hydrolysis reactions and condensation reactions with a functional organosilane or a combination of functional organosilanes, in presence of water as a reactant for hydrolysis and a suitable acid or a base as a catalyst is performed in order to obtain the first intermediate. In step two, a hydroxyl group-capping intermediate is prepared via reacting a hydroxyl reactable chemical with a hydroxyl functional polymerizable compound. In the third step, a hydroxyl group-capping reaction is conducted with the first intermediate and the hydroxyl group-capping intermediate, so as to obtain the organic-inorganic hybrid composition. It may further include a polymerization step to form an organic-inorganic hybrid polymer composition by UV irradiation or other approaches.
• METHOD OF PRODUCING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, DISPLAY DEVICE, IMAGE SENSOR, AND X-RAY SENSOR
  申请人：FUJIFILM CORPORATION

  公开号：US20150103977A1

  公开（公告）日：2015-04-16

  A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by In (a) Ga (b) Zn (c) O (d) , the second region being represented by In (e) Ga (f) Zn (g) O (h) , and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.
• US7850881B2
  申请人：——

  公开号：US7850881B2

  公开（公告）日：2010-12-14
• US9428605B2
  申请人：——

  公开号：US9428605B2

  公开（公告）日：2016-08-30
• US9673048B2
  申请人：——

  公开号：US9673048B2

  公开（公告）日：2017-06-06