10-methyl-9H-thioxanthen-10-ium

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻喃类
• 英文名称: 10-methyl-9H-thioxanthen-10-ium
• 化学式: C14H13S+
• 分子量: 213.32
• InChiKey: GAFRXWZQTAJAEB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4
• 重原子数：
  15
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.14
• 拓扑面积：
  1
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS
  申请人：Ohsawa Youichi

  公开号：US20130034813A1

  公开（公告）日：2013-02-07

  A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.

  一种化学增感正型光刻胶组合物，包括（A）三氟甲基-3,3,3-三氟-2-羟基-2-丙酸磺酸盐，（B）酸发生剂，（C）碱性树脂和（D）有机溶剂，适用于ArF浸没光刻。羧酸磺酸盐具有高度疏水性，在浸没水中几乎不溶出。通过控制酸扩散，可以构建具有高分辨率的图案轮廓。
• ONIUM SALT, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20210395195A1

  公开（公告）日：2021-12-23

  An onium salt having a partial structure of formula (A) is provided wherein R a1 and R a2 are hydrogen or a C 1 -C 10 hydrocarbyl group in which hydrogen may be substituted by halogen and —CH 2 — may be replaced by —O— or —C(═O)—, both R a1 and R a2 are not hydrogen at the same time, R a1 and R a2 may bond together to form an aliphatic ring. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

  提供了一种具有部分结构为式（A）的酰离子盐，其中Ra1和Ra2是氢或C1-C10烃基，其中氢可以被卤素取代，而-CH2-可以被-O-或-C（═O）-取代，Ra1和Ra2不同时为氢，Ra1和Ra2可以结合形成脂肪环。包含该酰离子盐作为酸发生剂的化学增感负性光阻组合物形成具有高灵敏度、改善溶解对比度、降低LWR和改善CDU的良好轮廓的图案。
• AROMATIC SULFONIUM SALT COMPOUND
  申请人：Nakayashiki Tesuyuki

  公开号：US20110152540A1

  公开（公告）日：2011-06-23

  A photoacid generator which can generate an acid efficiently when energy was absorbed, is excellent in the developing property and can form fine patterns, and a cationic polymerization initiator excellent in curability are provided; and a resist composition and a cationically polymerizable composition using them are provided. An aromatic sulfonium salt compound represented by the General Formula (I) below: (wherein each of E 1 to E 4 independently represents a substituent represented by the General Formula (II) below or the General Formula (III) below). Preferably, in the General Formula (I), r and s are 0; m and n are 0; or n and r are 0, and more preferably, one of m and s in the General Formula (I) is 1.

  提供了一种能够在吸收能量时高效生成酸的光酸发生剂，具有良好的显影性能和能够形成精细图案的阳离子聚合引发剂；并提供了使用它们的抗蚀剂组合物和阳离子聚合组合物。其中，芳香族磺酸盐化合物的通式如下所示：（式中，E1至E4各自独立地表示由下式（II）或下式（III）表示的取代基）。在通式（I）中，最好r和s均为0；m和n均为0；或n和r均为0，更好的是，通式（I）中m和s中的一个为1。
• NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20110189607A1

  公开（公告）日：2011-08-04

  There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R 1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R 2 and R 3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R 2 and R 3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.

  本发明公开了一种由下列通式（1）表示的烷基磺鎵盐。在该式中，X和Y分别表示具有可聚合官能团的基团；Z表示具有1至33个碳原子的双价碳氢基团，可选地含有一个杂原子；R1表示具有1至36个碳原子的双价碳氢基团，可选地含有一个杂原子；R2和R3分别表示具有1至30个碳原子的单价碳氢基团，可选地含有一个杂原子，或者R2和R3可以与该式中的硫原子一起形成环。可以提供一种可用作抗蚀剂组分的烷基磺鎵盐，该抗蚀剂组分在使用高能束如ArF准分子激光、EUV光和电子束作为光源的光刻工艺中，提供高分辨率和优异的LER，以及从该烷基磺鎵盐得到的聚合物、包含该聚合物的抗蚀剂组分和使用该抗蚀剂组分进行图案化处理的方法。
• POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
  申请人：Masunaga Keiichi

  公开号：US20110212391A1

  公开（公告）日：2011-09-01

  A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.

  使用含有氟化羧基离子盐结构的重复单元的聚合物作为侧链，用于配制化学增感正型光刻胶组分。当该组分通过光刻工艺形成正型图案时，胶膜中的酸扩散均匀缓慢，从而改善LER。