The problem of the present invention is to provide a novel organometallic compound that can be used for film formation by CVD or ALD methods. The problem of the present invention is solved by the novel organic metal compound having a silyldiamine compound of the present invention as a ligand, and a thin film forming material containing this organic metal compound. In other words, the novel organic metal compound having a silyldiamine compound of the present invention as a ligand is volatile and can be suitably used as a semiconductor film forming material.【Selected drawing】None.
[EN] NOVEL AMINO-SILYL AMINE COMPOUND, METHOD FOR PERPARING THE 'SAME AND SILICON-CONTAINING THIN-FILM USING THE SAME<br/>[FR] NOUVEAU COMPOSÉ AMINO-SILYL AMINE, SON PROCÉDÉ DE PRÉPARATION ET FILM MINCE CONTENANT DU SILICIUM L'UTILISANT