Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for thin film- and light emitting transistors
作者:Manuela Melucci、Massimo Zambianchi、Laura Favaretto、Massimo Gazzano、Alberto Zanelli、Magda Monari、Raffaella Capelli、Stefano Troisi、Stefano Toffanin、Michele Muccini
DOI:10.1039/c1cc14179a
日期:——
The design, synthesis and structure–property investigation of a new thienopyrrolyl dione substituted oligothiophene material showing reduced band gap energy, low lying LUMO energy level and ambipolar semiconducting behaviour is described.
描述了一种新的噻吩吡咯二酮取代的寡噻吩材料的设计、合成及其结构-性能研究,该材料具有较低的带隙能量、较低的LUMO能级和双极半导体行为。