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4-(S-乙酰基硫代)苯甲醛 | 28130-89-4

中文名称
4-(S-乙酰基硫代)苯甲醛
中文别名
4-(乙酰硫基)苯甲醛
英文名称
4-(S-acetylthio)benzaldehyde
英文别名
S-(4-formylphenyl) ethanethioate;p-(Acetylthio)-benzaldehyd
4-(S-乙酰基硫代)苯甲醛化学式
CAS
28130-89-4
化学式
C9H8O2S
mdl
——
分子量
180.227
InChiKey
PIMFYYQSMFCNPA-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.7
  • 重原子数:
    12
  • 可旋转键数:
    3
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.11
  • 拓扑面积:
    59.4
  • 氢给体数:
    0
  • 氢受体数:
    3

安全信息

  • 海关编码:
    2930909090

SDS

SDS:a9bb752077e7ffb99f194a01d0f5182b
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上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    4-(S-乙酰基硫代)苯甲醛sodium acetate乙酸酐 、 sodium hydroxide 作用下, 以 四氢呋喃乙醇 为溶剂, 反应 12.33h, 生成
    参考文献:
    名称:
    CN116589482
    摘要:
    公开号:
  • 作为产物:
    参考文献:
    名称:
    Thiol-Derivatized Porphyrins for Attachment to Electroactive Surfaces
    摘要:
    The attachment of porphyrin monomers and multiporphyrin arrays in controlled architectures on electroactive surfaces opens many opportunities for electrochemical studies. Toward this goal, we have developed routes for the preparation of thiol-derivatized porphyrin monomers and porphyrin building blocks that require minimal or no handling of free thiols. Routes to S-protected p-thiobenzaldehydes and m-(thiomethyl)benzaldehydes have been developed. TRIO sets of mesosubstituted porphyrins with variation in electrochemical potentials have been prepared for vertical or horizontal orientation with respect to the electroactive surface. In one set, each porphyrin bears one S-protected p-thiophenyl unit and substituents at the three remaining meso-positions. In the other set each porphyrin possesses four S-protected m-(thiomethyl)phenyl units. Tuning the electrochemical potential in the former set has been achieved by variation of the meso substituents (mesityl, 2,4,6-trimethoxyphenyl, n-pentyl, pentafluorophenyl) and in the latter set by variation of the central metal (Zn, Cu, Co, Ag). Six thiol protecting groups ES-cyano, S-(N-ethylcarbamoyl), S-acetyl, S-(9-anthrylmethyl), S-(2,4-dinitrophenyl), S-pivaloyl] have been found to be compatible with porphyrin formation and metalation with zinc. The S-cyano, S-(N-ethylcarbamoyl), and S-acetyl groups undergo in situ cleavage and/or binding on a gold surface. Of these three, only the S-acetyl protecting group is compatible with the Pd-mediated iodo-ethyne coupling conditions for the preparation of multiporphyrin arrays. Three trans-substituted porphyrin building blocks have been prepared for the synthesis of multiporphyrin arrays that can be attached to an electroactive surface. One porphyrin has two mesityl, one p-iodophenyl, and one p-(S-acetylthio)phenyl substituent for vertical positioning, and two porphyrins each have two m-iodophenyl and two S-protected m-(thiomethyl)phenyl substituents for horizontal positioning. Altogether, 16 free base and 16 metalloporphyrins have been prepared. This work establishes the foundation for preparing diverse thiol-derivatized porphyrin monomers and building blocks.
    DOI:
    10.1021/jo9911084
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文献信息

  • Investigation of Tightly Coupled Porphyrin Arrays Comprised of Identical Monomers for Multibit Information Storage
    作者:Christian Clausen、Daniel T. Gryko、Amir A. Yasseri、James R. Diers、David F. Bocian、Werner G. Kuhr、Jonathan S. Lindsey
    DOI:10.1021/jo000489e
    日期:2000.11.1
    synthesized a meso-linked porphyrin dimer with a thiol-linker in one of the meso positions. The S-acetyl protecting group was used to avoid handling free thiol groups. Coupling of zinc(II)-5,10,15-tris(3, 5-di-tert-butylphenyl)porphyrin ("upper half") and zinc(II)-5-[4-(S-acetylthio)phenyl]-10,20-bis(3, 5-di-tert-butylphenyl)porphyrin ("lower half") afforded three different meso-linked dimers with the
    我们基于分子的信息存储设备的现有设计采用了以弱耦合,共价连接的阵列形式组织的多个氧化还原活性单元。为了探索一种更简单的设计,我们在此报告了卟啉阵列的合成方法,其中具有相同氧化电位的卟啉直接相互连接,而不是通过分子接头连接。通过合理合成获得的与锌(II)-5,15-双(4-叔丁基苯基)-10-苯基卟啉的AgPF(6)的氧化偶合,提供了预期的二聚体,该二聚体通过介观键和意外键连接三聚体通过介观介导联系而加入。为了附着在电活性表面上,我们合成了一个介孔连接的卟啉二聚体,其中一个介孔位置带有硫醇连接基。使用S-乙酰基保护基以避免处理游离的硫醇基。锌(II)-5,10的偶联 15-三(3,5-二叔丁基苯基)卟啉(“上半部分”)和锌(II)-5- [4-(S-乙酰硫基)苯基] -10,20-双(3,5-二叔丁基苯基)卟啉(“下半部分”)提供了三种不同的内消旋连接的二聚体,其中所需的二聚体为主要产物。溶
  • Diverse Redox-Active Molecules Bearing O-, S-, or Se-Terminated Tethers for Attachment to Silicon in Studies of Molecular Information Storage
    作者:Arumugham Balakumar、Andrey B. Lysenko、Carole Carcel、Vladimir L. Malinovskii、Daniel T. Gryko、Karl-Heinz Schweikart、Robert S. Loewe、Amir A. Yasseri、Zhiming Liu、David F. Bocian、Jonathan S. Lindsey
    DOI:10.1021/jo034944t
    日期:2004.3.1
    molecules to electroactive surfaces requires control over the nature of the tether (linker and surface attachment group). We have synthesized a collection of redox-active molecules bearing different linkers and surface anchor groups in free or protected form (hydroxy, mercapto, S-acetylthio, and Se-acetylseleno) for attachment to surfaces such as silicon, germanium, and gold. The molecules exhibit a number
    信息存储的分子方法采用拴系在电活性表面上的氧化还原活性分子。分子与电活性表面的附着需要控制系链(连接子和表面附着基团)的性质。我们已经合成了氧化还原活性分子的集合,这些分子带有游离或受保护形式(羟基,巯基,S-乙酰硫基和Se的不同接头和表面锚定基团)-乙酰硒基),用于附着在硅,锗和金等表面上。该分子表现出许多阳离子氧化态,包括一个(二茂铁),两个[锌(II)卟啉],三个[钴(II)卟啉]或四个(镧系元素三层夹心化合物)。对附着在Si(100)电极上的各种氧化还原活性分子单层的电化学研究表明,分子表现出规则的附着模式(通过Si-X键,X = O,S或Se),相对均质的表面组织和强大的可逆电化学行为。乙酰基保护基在表面沉积过程中发生裂解,从而能够通过硫基或硒基连接到硅上,而无需处理游离的硫醇或硒醇。
  • [EN] 2-AZETIDINONES AS ANTI-HYPERCHOLESTEROLEMIC AGENTS<br/>[FR] COMPOSES DE 2-AZETIDINONES UTILISES COMME AGENTS POUR LUTTER CONTRE UNE HYPERCHOLESTEROLEMIE
    申请人:MERCK & CO INC
    公开号:WO2005044256A1
    公开(公告)日:2005-05-19
    The instant invention provides novel cholesterol absorption inhibitors of Formula I and the pharmaceutically acceptable salts and esters thereof. The compounds are useful for lowering plasma cholesterol levels, particularly LDL cholesterol, and for treating and preventing atherosclerosis and atherosclerotic disease events.
    本发明提供了I式胆固醇吸收抑制剂及其药学上可接受的盐和酯的新颖化合物。这些化合物可用于降低血浆胆固醇水平,特别是低密度脂蛋白胆固醇,并用于治疗和预防动脉硬化和动脉粥样硬化疾病事件。
  • Novel mercapto-substitued imidazolylporphyrin metal complex monomer, polymer having the same as a repeating unit and method of preparing the same
    申请人:——
    公开号:US20010027252A1
    公开(公告)日:2001-10-04
    A mercapto-substituted imidazolylporphyrin metal complex monomer represented by a general formula (1): 1 wherein R 1 represents a group selected from the group consisting of an alkyl group, unsubstituted aryl group, alkyl-substituted aryl group and alkyloxy-substituted aryl group, M represents a metal ion selected from the group consisting of Zn(II), Ga(III), Fe(II), Co(II), and Ru(II), X represents a divalent linking group containing at least one group selected from the group consisting of an arylene group and an alkylene group, R 2 represents a hydrogen atom or an acetyl group, and Im represents Im 1 or Im 2 set forth below: 2 wherein R 3 represents a hydrogen atom or an alkyl group.
    一种以一般式(1)表示的含巯基取代的咪唑基卟啉金属配合物单体,其中R1代表从烷基,未取代芳基,烷基取代芳基和烷氧基取代芳基组成的一组中选择的一个基团,M代表从Zn(II),Ga(III),Fe(II),Co(II)和Ru(II)组成的一组中选择的金属离子,X代表包含至少一个从芳撑基和烷基撑基中选择的基团的二价连接基团,R2代表氢原子或乙酰基基团,Im代表如下所述的Im1或Im2,其中R3代表氢原子或烷基基团。
  • High density non-volatile memory device
    申请人:Bocian F. David
    公开号:US20050041494A1
    公开(公告)日:2005-02-24
    This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10 15 bits/cm 3 ), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.
    本发明提供了一种新型的高密度存储器件,可进行电气寻址,实现有效的读写,提供高存储密度(例如,1015比特/厘米3),提供高度的容错性,并可进行高效的化学合成和芯片制造。这些设备本质上是可锁定的、缺陷容忍的,并支持破坏性或非破坏性读取周期。在优选实施例中,该设备包括一个固定电极与一个存储介质电性耦合,该存储介质具有多个不同和可区分的氧化态,通过向存储介质添加或提取一个或多个电子,将数据存储在所述氧化态中。
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同类化合物

硫基丙酸苯酯 硫代乙酸S-[4-[二(2-氯乙基)氨基]苯基]酯 硫代乙酸 S-(2-乙基苯基)酯 乙硫酸,[[(1,1-二甲基乙基)二甲基甲硅烷基]氧代]-,S-苯基酯 S1,S2-二(4-氯苯基)乙烷二(硫代ate) S-苯基硫代异丁酸酯 S-苯基3-羟基硫代丁酸酯 S-苯基2-氟硫代乙酸酯 S-硫代乙酸苯酯 S-氯乙酰基-P-巯基甲苯 S-丙酰基-p-疏基甲苯 S-[4-[2-[4-(2-苯乙炔基)苯基]乙炔基]苯基]硫代乙酸酯 S-(三氟乙酰基)-4-疏基甲苯 S-(4-甲基苯基)硫代乙酸酯 S,S′-[1,4-亚苯基二(2,1-乙炔二基-4,1-亚苯基)]双(硫代乙酸酯) O-乙基S-(4-甲基苯基)单硫代草酸酯 4-溴苯基硫代乙酸酯 4-(S-乙酰基硫代)苯甲醛 4,4-二甲基-1-氧代-1-(苯基硫基)-2-戊烷基乙酸酯 3-氧代-3-(4-甲氧基苯氧基)丙酸 2-甲基苯硫酚乙酸酯 1-乙酰巯基-4-碘苯 S-(2-methoxyphenyl) 4-cyclopropylidenebutanethioate phenyl 3-methyl-2-cyclohexene-1-carbothioate S-(2-fluorophenyl) 2-methylpropanethioate 2-isopropylidenedithiosuccinic acid di-S-(4-fluorophenyl) ester thioacetic acid S-(4-ethyl-phenyl ester) S-phenyl 2,3-dimethyl-2-butenethioate 3-phenylsulfanylcarbonyl-propionic acid ethyl ester S-phenyl (3r,5r,7r)-adamantane-1-carbothioate (E)-S-Phenyl 4,4-dimethylpent-2-enethioate S-phenyl 2-(2-methoxyphenyl)ethanethioate S-phenyl (2R,3R)-3-(tert-butyldimethylsiloxy)-2-methyl-3-phenylpropanethioate S-(4-fluorophenyl) thiopivalate S-phenyl 2-methylbutanethioate S-phenyl 3-(phenyl((trimethylsilyl)oxy)amino)-3-(thiophen-2-yl)propanethioate S-phenyl 3-(4-bromophenyl)-3-(phenyl((trimethylsilyl)oxy)amino)propanethioate S-phenyl 3-phenyl-3-(phenyl((triethylsilyl)oxy)amino)propanethioate S-phenyl 3-cyclohexyl-3-(phenyl((trimethylsilyl)oxy)amino)propanethioate S-phenyl 3-(((tert-butyldimethylsilyl)oxy)(phenyl)amino)-3-phenylpropanethioate S-phenyl 3-(4-methoxyphenyl)-3-(phenyl((trimethylsilyl)oxy)amino)propanethioate S-phenyl 3-(phenyl((trimethylsilyl)oxy)amino)-3-(p-tolyl)propanethioate S-phenyl 3-(4-fluorophenyl)-3-(phenyl((trimethylsilyl)oxy)amino)propanethioate S-phenyl 3-phenyl-3-(phenyl((trimethylsilyl)oxy)amino)propanethioate (E)-S-phenyl 5-phenyl-3-(phenyl((trimethylsilyl)oxy)amino)pent-4-enethioate S-phenyl 3-hydroxy-3-(4-methoxyphenyl)propanethioate S-phenyl 2-methyl-3-oxobutanethioate S-phenyl O-acetyl(thioglycolate) 6-Nitro-9-oxodecansaeure-phenylthioester 2-isopropylidenedithiosuccinic acid di-S-p-tolyl ester