作者:S. D. Cosham、A. L. Johnson、K. C. Molloy、Andrew J. Kingsley
DOI:10.1021/ic2015644
日期:2011.12.5
This paper focuses on the development of potential single source precursors for M–N–Si (M = Ti, Zr or Hf) thin films. The titanium, zirconium, and hafnium silylimides (Me2N)2MNSiR1R2R3 [R1 = R2 = R3 = Ph, M = Ti(1), Zr (2), Hf (3); R1 = R2 = R3 = Et, M = Ti (4), Zr (5), Hf (6); R1 = R2 = Me, R3 = tBu, M = Ti (7), Zr (8), Hf (9); R1 = R2 = R3 = NMe2, M = Ti (10), Zr (11), Hf (12)] have been synthesized
本文着重于开发M–N–Si(M = Ti,Zr或Hf)薄膜的潜在单一来源前驱物。钛,锆和ha的甲硅烷基酰亚胺(Me 2 N)2 MNSiR 1 R 2 R 3 [R 1 = R 2 = R 3 = Ph,M = Ti(1),Zr(2),Hf(3); R 1= R 2= R 3= Et,M = Ti(4),Zr(5),Hf(6);R 1 = R 2 = Me,R 3 = tBu,M = Ti(7),Zr(8),Hf(9); R 1 = R 2 = R 3 = NMe 2,M = Ti(10),Zr(11),Hf(12)]是通过M(NMe 2)4和R 3 R 2 R 1 SiNH的反应合成的2。所有化合物对空气和湿气特别敏感。化合物1,2,4,和7 - 10已结构表征,并且所有是二聚,具有通式[M(NME 2)2(μ-NSiR 3)] 2,其中μ 2个-NSiR 3基团桥接两个四坐标金属中心。