An Electroreductive Approach to Radical Silylation via the Activation of Strong Si–Cl Bond
作者:Lingxiang Lu、Juno C. Siu、Yihuan Lai、Song Lin
DOI:10.1021/jacs.0c10899
日期:2020.12.23
In this context, reactions mediated by silyl radicals have become increasingly attractive but methods for accessing these intermediates remain limited. We present a new strategy for silyl radical generation via electroreduction of readily available chlorosilanes. At highly biased potentials, electrochemistry grants access to silyl radicals through energetically uphill reductive cleavage of strong
Thermal properties of variously substituted poly[(disilanylene)oligophenylenes], [(SiR1R2SiR1R2)(p-C6H4)m]n (R1=R2=Me, R1=R2=Et, and R1=Ph, R2=Me, m=1–4) were investigated. The thermogravimetric analysis of the polymers in the range of 20–1000°C showed rapid weight loss starting from about 400°C. The total weight loss of the polymers at 1000°C was calculated to be 54.5–75.5% based on the initial weight
各种取代的聚[(二亚硅烷基)低聚亚苯基],[(SiR 1 R 2 SiR 1 R 2)(p -C 6 H 4)m ] n(R 1 = R 2 = Me,R 1 = R 2 = Et,R 1 = Ph,R 2 = Me,m= 1–4)进行了调查。在20–1000°C范围内对聚合物进行热重分析表明,从约400°C开始,重量迅速下降。基于聚合物的初始重量,聚合物在1000°C时的总重量损失为54.5-75.5%。对聚合物进行热解得到的挥发性产物的GC-MS分析,其中R 1 = R 2 = Me,m = 2,R 1 = R 2 = Et,m = 1–4在500°C时表明形成了硅Si-Si和Si-亚苯基键断裂产生的含低聚物,主要是。H(C 6 H 4)l H(l在m = 3和4的聚合物的热解中也观察到了= 1–4)。还使用1,2-二苯基四甲基二硅烷检查了聚合物降解的模型反应。
Hydrogen‐Bridged Oligosilanylsilyl Mono‐ and Oligosilanylsilyl Dications
作者:Jelte P. Nimoth、Thomas Müller
DOI:10.1002/chem.202104318
日期:2022.2.16
The presence of multiple Si−H functionalities in one molecule is used to generate at low temperatures oligosilane-based mono- and dications that are stabilized by intramolecular 3c2e Si−H−Si bridges. For the oligosilanylsilyl monocation, a rapid intramolecular Si−H group exchange is monitored by NMR spectroscopy at low temperatures. This dynamic process is not observed for the corresponding dication
作者:Rebekka S. Klausen、Jonathan R. Widawsky、Michael L. Steigerwald、Latha Venkataraman、Colin Nuckolls
DOI:10.1021/ja211677q
日期:2012.3.14
Bulk silicon, the bedrock of information technology, consists of the deceptively simple electronic structure of just Si-Si σ bonds. Diamond has the same lattice structure as silicon, yet the two materials have dramatically different electronic properties. Here we report the specific synthesis and electrical characterization of a class of molecules, oligosilanes, that contain strongly interacting Si-Si