4-Methyl-naphthalin-1,2-diol | 67535-21-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 4-Methyl-naphthalin-1,2-diol
• 英文别名: 4-methyl-naphthalene-1,2-diol；3.4-Dihydroxy-1-methyl-naphthalin；4-Methylnaphthalene-1,2-diol
• CAS: 67535-21-1
• 化学式: C₁₁H₁₀O₂
• 分子量: 174.199
• InChiKey: SJHXXPMCRZJNSA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  13
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.09
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  4-Methyl-naphthalin-1,2-diol 、 乙酸酐 在 吡啶 作用下， 生成 1,2-diacetoxy-4-methyl-naphthalene
  参考文献：
  名称：

  Vesely; Bubenik, Collection of Czechoslovak Chemical Communications, 1939, vol. 11, p. 412,417

  摘要：

  DOI：
• 作为产物：
  描述：

  alkaline earth salt of/the/ methylsulfuric acid 在 二氧化硫 作用下， 生成 4-Methyl-naphthalin-1,2-diol
  参考文献：
  名称：

  Vesely; Bubenik, Collection of Czechoslovak Chemical Communications, 1939, vol. 11, p. 412,417

  摘要：

  DOI：

文献信息

• COMPOSITION FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3508918A1

  公开（公告）日：2019-07-10

  The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

  本发明提供了：一种用于形成有机薄膜的组合物，该组合物具有高过滤性，能够形成具有高图案抗弯曲性的有机薄膜，并且在干法蚀刻后能够防止特别细于40纳米的高光谱线图案发生线崩溃和扭曲；一种使用该组合物的形成有机薄膜的方法和图案化工艺；以及一种用于制造半导体器件的基板，包括在该基板上形成的有机薄膜。用于形成有机薄膜的组合物包括缩合物（A），它是下式（1）所示的二羟基萘和缩合剂的缩合产物，或缩合物（A）的衍生物。冷凝液（A）或冷凝液（A）的衍生物所含成分元素中的硫含量按质量计算不超过 100 ppm。
• Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US11018015B2

  公开（公告）日：2021-05-25

  The invention provides: a composition for forming an organic film, the composition having high filterability and enabling formation of an organic film which has high pattern-curving resistance, and which prevents a high-aspect line pattern particularly finer than 40 nm from line collapse and twisting after dry etching; a method for forming an organic film and a patterning process which use the composition; and a substrate for manufacturing a semiconductor device, including the organic film formed on the substrate. The composition for forming an organic film includes a condensate (A), which is a condensation product of dihydroxynaphthalene shown by the following formula (1) and a condensation agent, or a derivative of the condensate (A). A sulfur content among constituent elements contained in the condensate (A) or the derivative of the condensate (A) is 100 ppm or less in terms of mass.

  本发明提供了：一种用于形成有机薄膜的组合物，该组合物具有高过滤性，能够形成具有高图案抗弯曲性的有机薄膜，并且在干法蚀刻后能够防止特别细于40纳米的高光谱线图案发生线崩溃和扭曲；一种使用该组合物的形成有机薄膜的方法和图案化工艺；以及一种用于制造半导体器件的基板，包括在该基板上形成的有机薄膜。用于形成有机薄膜的组合物包括缩合物（A），它是下式（1）所示的二羟基萘和缩合剂的缩合产物，或缩合物（A）的衍生物。冷凝液（A）或冷凝液（A）的衍生物所含成分元素中的硫含量按质量计算不超过 100 ppm。
• SURFACE PRIMER COMPOSITIONS AND METHODS OF USE
  申请人：ACatechol, Inc.

  公开号：US20170217999A1

  公开（公告）日：2017-08-03

  In one embodiment, the present application discloses a surface binding compound of the Formula I or Formula II: wherein the variables EG, EG1, SP1, SP2, SP3, Ar and BG are as defined herein. In another embodiment, the application discloses a method for forming a coating on a surface of a substrate using the surface binding compound of the Formula I or Formula II.
• US4182918A
  申请人：——

  公开号：US4182918A

  公开（公告）日：1980-01-08