[Bis(hydroxymethyl)phosphanylmethyl-[2-[bis(phosphonomethyl)amino]ethyl]amino]methylphosphonic acid

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机膦酸及其衍生物
• 英文名称: [Bis(hydroxymethyl)phosphanylmethyl-[2-[bis(phosphonomethyl)amino]ethyl]amino]methylphosphonic acid
• 化学式: C₈H₂₄N₂O₁₁P₄
• 分子量: 448.18
• InChiKey: YLMAAGQQGHHONQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -10.8
• 重原子数：
  25
• 可旋转键数：
  13
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  220
• 氢给体数：
  8
• 氢受体数：
  13

文献信息

• POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
  申请人：Miller Anne

  公开号：US20140141612A1

  公开（公告）日：2014-05-22

  The polishing composition of the present invention contains an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below. In the formulas, X 1 and X 2 are each independently a hydrogen atom, a hydroxyl group, a carboxyl group, a phosphate group, an alkyl group, an aryl group, an alkyl polyamine group, an alkyl polyphosphate group, an alkyl polycarboxylate group, an alkyl polyaminopolyphosphate group, or an alkyl polyaminopolycarboxylate group.
• US9150758B2
  申请人：——

  公开号：US9150758B2

  公开（公告）日：2015-10-06