PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND
申请人:SATO Mitsuo
公开号:US20120258402A1
公开(公告)日:2012-10-11
A photoresist composition includes a polymer that includes a structural unit shown by the following formula (1), and a photoacid generator. R
1
in the formula (1) represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, Z represents a group that forms a divalent alicyclic group having 3 to 20 carbon atoms together with a carbon atom bonded to X, X represents an alkanediyl group having 1 to 6 carbon atoms, Y represents a hydrogen atom or —CR
2
R
3
(OR
4
), and R
2
to R
4
independently represent a hydrogen atom or a monovalent hydrocarbon group, provided that R
3
and R
4
optionally bond to each other to form a cyclic ether structure together with a carbon atom bonded to R
3
and an oxygen atom bonded to R
4
.
RADIATION SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A PATTERN, POLYMER AND COMPOUND
申请人:Kimoto Takakazu
公开号:US20120276482A1
公开(公告)日:2012-11-01
A radiation sensitive resin composition includes a first polymer having a group represented by a following formula (1), and a radiation sensitive acid generator. n is an integer of 2 to 4. X represents a single bond or a bivalent organic group. A represents a (n+1) valent linking group. Each Q independently represents a group that includes an alkali-dissociable group.
RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND
申请人:Osaki Hitoshi
公开号:US20130122426A1
公开(公告)日:2013-05-16
A radiation-sensitive resin composition that provides a resist coating film in a liquid immersion lithography process is provided, the radiation-sensitive resin composition being capable of exhibiting a great dynamic contact angle during exposure, whereby the surface of the resist coating film can exhibit a superior water draining property, and the radiation-sensitive resin composition being capable of leading to a significant decrease in the dynamic contact angle during development, whereby generation of development defects can be inhibited, and further shortening of a time period required for change in a dynamic contact angle is enabled. A radiation-sensitive resin composition including (A) a fluorine-containing polymer having a structural unit (I) that includes a group represented by the following formula (1), and (B) a radiation-sensitive acid generator.
RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ORGANIC ACID AND ACID GENERATING AGENT
申请人:MATSUDA Yasuhiko
公开号:US20130065186A1
公开(公告)日:2013-03-14
A radiation-sensitive resin composition includes an acid generating agent to generate an organic acid by irradiation with a radioactive ray. The organic acid has a cyclic hydrocarbon group and an organic group including a bond that is cleavable by an acid or a base to produce a polar group. The organic acid is preferably represented by a following formula (I). Z represents an organic acid group. R
2
represents an alkanediyl group, wherein a part or all of hydrogen atoms of the alkanediyl group represented by R
1
are optionally substituted by a fluorine atom. X represents a single bond, O, OCO, COO, CO, SO
3
or SO
2
. R
2
represents a cyclic hydrocarbon group. R
3
represents a monovalent organic group having a functional group represented by a following formula (x). n is an integer of 1 to 3.
Z—R
1
—X—R
2
—(R
3
)
n
(I)
—R
31
-G-R
13
(x)
A novel photoacid generator containing a structure of the following formula (I),
1
wherein R is a monovalent organic group with a fluorine content of 50 wt % or less, a nitro group, a cyano group, or a hydrogen atom, and Z
1
and Z
2
are individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.