methyltri-n-hexylammonium formate | 1610517-51-5

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: methyltri-n-hexylammonium formate
• 英文别名: MTHA formate；Trihexyl(methyl)azanium;formate
• CAS: 1610517-51-5
• 化学式: CHO₂*C₁₉H₄₂N
• 分子量: 329.567
• InChiKey: WYBVTFVJVJZDOY-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  4.54
• 重原子数：
  23
• 可旋转键数：
  15
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.95
• 拓扑面积：
  40.1
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• PROCESS FOR PREPARING FORMIC ACID
  申请人：BASF SE

  公开号：US20140148617A1

  公开（公告）日：2014-05-29

  Process for obtaining formic acid by thermal separation of a stream comprising formic acid and a tertiary amine (I), in which, in step (a), a liquid stream comprising formic acid, methanol, water and tertiary amine (I) is produced by combining methyl formate, water and tertiary amine (I), from there in step (b), methanol is separated off and in step (c), formic acid is removed by distillation from the liquid stream obtained in a distillation apparatus, wherein, when methyl formate, water and tertiary amine (I) are combined, methyl formate, water and optionally tertiary amine (I) are first introduced in step (a1) in a molar ratio of 0≦n(amine to a1)/n(mefo to a1)≦0.1, and from 70 to 100% of the hydrolysis equilibrium possible is set and then, in step (a2), tertiary amine (I) is introduced in a molar ratio of 0.1≦n(amine to a2)/n(mefo to a1)≦2, and the mixture is reacted.

  通过热分离流体中的甲酸和三级胺（I）来获取甲酸的过程，其中在步骤（a）中，通过混合甲酸甲酯、水和三级胺（I）产生包含甲酸、甲醇、水和三级胺（I）的液态流体，然后在步骤（b）中分离甲醇，在步骤（c）中，通过蒸馏从蒸馏设备中获得的液态流体中除去甲酸。当混合甲酸甲酯、水和三级胺（I）时，在步骤（a1）中首先以0≦n（胺对a1）/n（mefo对a1）≦0.1的摩尔比引入甲酸甲酯、水和可选的三级胺（I），并设置70％至100％的水解平衡，然后在步骤（a2）中以0.1≦n（胺对a2）/n（mefo对a1）≦2的摩尔比引入三级胺（I），并使混合物反应。
• COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE
  申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

  公开号：EP1568744A1

  公开（公告）日：2005-08-31

  A composition for film formation from which a porous film excelling in dielectric characteristics, adherence, coating film uniformity and mechanical strength and realizing reduced moisture absorption can be prepared; a porous film and a process for producing the same; and a highly reliable semiconductor device of high performance wherein the porous film is incorporated. In particular, a composition for porous film formation, obtained by adding to a siloxane polymer at least one quaternary ammonium salt represented by the general formula: [(R<1>)4N]<+>[R<2>X]<-> (1), or Hk[(R<1>)4N]m<+>Y (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C-CO2, NO3 or NO2; k is 0 or 1; each of m and n is 1 or 2; when n=1, k=0 and m=1; and when n=2, either k=0 and m=2, or k=1 and m=1.

  一种可制备介电特性、附着力、涂膜均匀性和机械强度优异的多孔膜并实现降低吸湿性的成膜用组合物；一种多孔膜及其生产工艺；以及一种含有该多孔膜的高性能高可靠性半导体器件。特别是一种用于形成多孔薄膜的组合物，它是通过向硅氧烷聚合物中添加至少一种由通式表示的季铵盐而获得的：[(R)4N][RX](1)，或 Hk[(R)4N]mY (2)，其中 X 代表 CO2、OSO3 或 SO3；Y 代表 SO4、SO3、CO3、O2C-CO2、NO3 或 NO2；k 为 0 或 1；m 和 n 各为 1 或 2；当 n=1 时，k=0，m=1；当 n=2 时，或者 k=0，m=2，或者 k=1，m=1。
• Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
  申请人：Matsushita Electric Industrial Co., Ltd.

  公开号：US20040219372A1

  公开（公告）日：2004-11-04

  Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R 1 ) 4 N]+[R 2 X] − (1) H k [(R 1 ) 4 N] m + Y − (2) wherein X represents CO 2 , OSO 3 or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3 or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=O and m=2, or k=1 and m=1.

  本发明提供了一种可形成介电常数、粘附性、薄膜均匀性、机械强度优异且吸湿性低的多孔薄膜的成膜组合物；多孔薄膜及其成膜方法；以及一种内部包含该多孔薄膜的高性能、高可靠性半导体器件。更具体地说，提供了一种用于形成多孔薄膜的组合物，该组合物包括硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐： [(R 1 ) 4 N]+[R 2 X&rsqb； - (1) H k [(R 1 ) 4 N&rsqb； m &plus； Y - (2) 其中 X 代表 CO 2 、OSO 3 或 SO 3 Y 代表 SO 4 、SO 3 , CO 3 , O 2 C-CO 2 NO 3 或 NO 2 ；且 k 为 0 或 1，m 为 1 或 2，n 为 1 或 2，但条件是 n=1 需要 k=0 和 m=1，n=2 需要 k=O 和 m=2，或 k=1 和 m=1。
• VERFAHREN ZUR HERSTELLUNG VON AMEISENSÄURE
  申请人：BASF SE

  公开号：EP2925715A1

  公开（公告）日：2015-10-07
• COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE
  申请人：Ogihara Tsutomu

  公开号：US20070135565A1

  公开（公告）日：2007-06-14

  Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R 1 ) 4 N] + [R 2 X] − ( 1 ) H k [(R 1 ) 4 N] m + Y n− ( 2 ) wherein X represents CO 2 , OSO 3 or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3 or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.