methyltriethylammonium fluoride | 41157-52-2

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: methyltriethylammonium fluoride
• 英文别名: Triethyl(methyl)azanium;fluoride
• CAS: 41157-52-2
• 化学式: C₇H₁₈N*F
• 分子量: 135.225
• InChiKey: ASVMCHUOIVTKQQ-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  -1.5
• 重原子数：
  9
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  silica gel 、 methyltriethylammonium fluoride 以 水 为溶剂， 反应 360.0h， 生成 [Si₃₆O₇₂(OH)₄]*4(diethyldimethylammonium)
  参考文献：
  名称：

  层状硅酸盐与镁碱沸石型层的全缩合形成多孔的层状硅酸盐†

  摘要：

  通过水热合成，从硅酸，水和氢氧化四烷基铵/四烷基phosph的混合物中获得了五种不同的含水层硅酸盐（HLSs），它们包含铁层（镁碱沸石型层）。已添加有机阳离子作为结构导向剂（SDA）。结构的特征是在相邻层的末端硅烷醇/甲硅烷氧基之间存在强至中强氢键。五层硅酸盐仅在有机阳离子方面在化学上有所不同。在结构上，它们相对于所述的排列不同的FER层相对于彼此，这是不同的，每SDA- FER层系统。RUB-20（含有四甲基铵）和RUB-40（四甲基鏻）是单斜晶系堆积顺序AAA和位移矢量连续层1之间一个0 + 0 b 0 + 0.19 c ^ 0和1一0 + 0 b 0 + 0.24 Ç 0，分别。RUB-36（二乙基二甲基），RUB-38（甲基三乙基铵）和RUB-48（trimethylisopropylammonium）是斜方晶系与堆叠序列ABAB和位移矢量0.5一0 + 0 b 0 ±0.36 Ç

  DOI：

  10.1039/c4dt00262h

文献信息

• FLUOROLACTONE AND METHOD FOR PRODUCING SAME
  申请人：DAIKIN INDUSTRIES, LTD.

  公开号：US20210371392A1

  公开（公告）日：2021-12-02

  The present disclosure provides, for example, a method that can produce a fluorolactone compound from hexafluoropropylene oxide or the like in a single step. The present disclosure relates to a method for producing a compound represented by formula (1): wherein two R 1 are the same and each is a fluorine atom or a fluoroalkyl group, the method comprising step A of reacting a compound represented by formula (2): wherein R 1 is as defined above, with a compound (3) represented by formula (3-1) or the like: wherein R 31 , R 32 , and R 33 are the same or different and each is a hydrogen atom or a C 1-10 alkyl group, or two of them are optionally linked to each other to form a ring optionally having one or more substituents, in the presence of a fluorine compound (4) represented by formula (4-1) or the like: MH n F m (4-1) wherein M is a metal atom, n is 0 or 1, and the sum of the valence number of M and n is m, and an organic solvent, provided that the compound represented by formula (3) is excluded from the organic solvent.

  本公开提供了一种方法，例如可以通过单步反应从六氟丙烯氧化物或类似物质产生氟代内酯化合物。本公开涉及一种用于生产由式（1）表示的化合物的方法：其中两个R1相同，每个是氟原子或氟代烷基，该方法包括步骤A，其通过将由式（2）表示的化合物与由式（3-1）表示的化合物或类似化合物反应：其中R1如上所定义，R31、R32和R33相同或不同，每个是氢原子或C1-10烷基，或其中两个可以选配地连接在一起形成具有一个或多个取代基的环，在氟化物化合物（4-1）或类似化合物的存在下，在有机溶剂的存在下，前提是由式（3）表示的化合物被排除在有机溶剂之外。
• Anticariogenic and anticalculus compositions containing zeolitic zinc cations
  申请人：UOP

  公开号：EP0297563A2

  公开（公告）日：1989-01-04

  The anticariogenic activity of fluorine-containing compounds in oral compositions also containing zeolitic zinc ions is retained at advantageous levels over protracted periods of time by adjusting the pH of the composition to the range of 9.5 to 11. The zeolite not only provides desired Zn⁺⁺ ions to the formulation with minimal adverse affect on the active fluoride content but also is found to be an exceptionally good abrasive and/or polishing agent.

  通过将口服组合物的 pH 值调节到 9.5 至 11 之间，可使同样含有沸石锌离子的口服组合物中含氟化合物的抗龋齿活性长期保持在有利水平。沸石不仅能为配方提供所需的锌⁺⁺离子，而且对活性氟含量的不利影响极小。
• Verfahren zur Herstellung von 4-Aminodiphenylamin
  申请人：BAYER AG

  公开号：EP0941985A1

  公开（公告）日：1999-09-15

  4-Aminodiphenylamine werden hergestellt, indem man Nitrosobenzol oder Gemische aus Nitrosobenzol und Nitrobenzol mit Wasserstoff in Gegenwart von Fluoriden und heterogenen Katalysatoren in inerten aprotischen Lösungsmitteln bei Temperaturen von 0 bis 200°C und Drücken von 0,1 bis 150 bar hydriert.

  4-aminodiphenylamines 是在氟化物和异相催化剂的作用下，在 0 至 200°C 的温度和 0.1 至 150 巴的压力下，在惰性非沸腾溶剂中通过亚硝基苯或亚硝基苯和硝基苯混合物与氢的氢化反应制得的。
• ETCHING COMPOSITION FOR METAL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING SAME
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP1895577A1

  公开（公告）日：2008-03-05

  The invention provides an etchant composition employed for selectively etching a metallic material in production of a semiconductor device from an insulating material having high dielectric constant, an insulating material of silicon oxide film or silicon nitride film, and a metallic material, characterized in that the etchant composition is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. The invention also provides a method for producing a semiconductor device employing the etchant composition. According to the invention, a metallic material can be etched selectively and efficiently.

  本发明提供了一种蚀刻剂组合物，用于在生产半导体器件时选择性地蚀刻金属材料，蚀刻剂组合物由具有高介电常数的绝缘材料、氧化硅膜或氮化硅膜绝缘材料和金属材料组成，其特征在于蚀刻剂组合物是一种水溶液，含有一种氟化合物和一种螯合剂，螯合剂的分子结构中以氧化磷酸为官能团；或者是含有氟化合物、分子结构中以氧化磷酸为官能团的螯合剂以及无机酸和/或有机酸的水溶液。本发明还提供了一种使用蚀刻剂组合物生产半导体器件的方法。根据本发明，可以选择性地、高效地蚀刻金属材料。
• CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE OR DISPLAY DEVICE, AND CLEANING METHOD
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP1959303A1

  公开（公告）日：2008-08-20

  A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols. In consequence, according to the cleaning method of the present invention, in manufacturing semiconductor devices or display devices, it is possible to extremely advantageously manufacture circuit wirings with a little burden on the environment, high precision and high quality on an industrial scale.

  本发明提供了一种用于半导体器件或显示器件的清洗液，该清洗液含有在碳链的相邻位置上具有两个或两个以上氨基的特定结构的多胺或其盐，以及使用该清洗液的半导体器件或显示器件的清洗方法。本发明的半导体器件或显示器件清洗液安全性高，对环境的负担小，能够在短时间内轻松去除半导体基板上的蚀刻残留物；在这种情况下，可以实现微细加工，而不会彻底腐蚀配线材料；此外，只需用水即可实现漂洗，而无需使用醇类等有机溶剂作为漂洗液。因此，根据本发明的清洗方法，在制造半导体器件或显示器件时，可以极为有利地制造出对环境负担小、高精度和高质量的工业规模的电路布线。