(Z)-N,N'-di(propan-2-yl)ethene-1,2-diamine

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: (Z)-N,N'-di(propan-2-yl)ethene-1,2-diamine
• 化学式: C₈H₁₈N₂
• 分子量: 142.24
• InChiKey: QXCIXKNYHWHRDG-WAYWQWQTSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.1
• 重原子数：
  10
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  24.1
• 氢给体数：
  2
• 氢受体数：
  2

文献信息

• [EN] A DIAMINE COMPOUND OR ITS SALT, PREPARING METHOD OF THE SAME, AND USES OF THE SAME<br/>[FR] COMPOSÉ DIAMINE OU SON SEL, PROCÉDÉ POUR LE PRÉPARER, ET SES UTILISATIONS
  申请人：UP CHEMICAL CO LTD

  公开号：WO2012176989A1

  公开（公告）日：2012-12-27

  The present disclosure relates to a diamine compound or its salt having utility for preparing an organometallic compound suitable for vapor phase deposition processes such as a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

  本公开涉及一种二胺化合物或其盐，其用于制备适用于气相沉积工艺的有机金属化合物，如化学气相沉积（CVD）方法或原子层沉积（ALD）方法。
• HYDROSILANE DERIVATIVE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SILICON-CONTAINING THIN FILM
  申请人：Tada Ken-ichi

  公开号：US20130123528A1

  公开（公告）日：2013-05-16

  This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500° C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1′) by reacting a chlorosilane derivative ( 3 ) with a compound M 2 Z ( 4 ) and produce the silicon-containing thin film by using the hydrosilane derivative as the material. In the formulae, R 1 , R 2 are defined in the specification.

  这项发明旨在提供一种材料，可以在低于500℃的温度下，不使用等离子体或类似物质，高效地制造含硅薄膜。该发明涉及通过将氯硅烷衍生物（3）与化合物M2Z（4）反应，制备一种由一般式（1'）表示的氢硅烷衍生物，并使用该氢硅烷衍生物作为材料制备含硅薄膜。在公式中，R1、R2在说明书中有定义。
• FILM-FORMING MATERIAL, GROUP IV METAL OXIDE FILM AND VINYLENEDIAMIDE COMPLEX
  申请人：Kinoshita Tomoyuki

  公开号：US20140227456A1

  公开（公告）日：2014-08-14

  An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.
• US9120825B2
  申请人：——

  公开号：US9120825B2

  公开（公告）日：2015-09-01
• US9371452B2
  申请人：——

  公开号：US9371452B2

  公开（公告）日：2016-06-21