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三(三甲基硅烷基)-胂 | 17729-30-5

中文名称
三(三甲基硅烷基)-胂
中文别名
——
英文名称
Tris(trimethylsilyl)arsan
英文别名
tris(trimethylsilyl)arsane
三(三甲基硅烷基)-胂化学式
CAS
17729-30-5
化学式
C9H27AsSi3
mdl
——
分子量
294.491
InChiKey
OFQPGOWZSZOUIV-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    82-84 °C(Press: 4 Torr)
  • 密度:
    0.9939 g/cm3

计算性质

  • 辛醇/水分配系数(LogP):
    3.73
  • 重原子数:
    13
  • 可旋转键数:
    3
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

安全信息

  • 海关编码:
    2931900090

SDS

SDS:641b5399f21f121507374bdbb90d05f1
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Name: [Tris(trimethylsilyl)]arsenide 98% Material Safety Data Sheet
Synonym:
CAS: 17729-30-5
Section 1 - Chemical Product MSDS Name:[Tris(trimethylsilyl)]arsenide 98% Material Safety Data Sheet
Synonym:

Section 2 - COMPOSITION, INFORMATION ON INGREDIENTS
CAS# Chemical Name content EINECS#
17729-30-5 [Tris(trimethylsilyl)]arsenide 98% unlisted
Hazard Symbols: T
Risk Phrases: 23/25

Section 3 - HAZARDS IDENTIFICATION
EMERGENCY OVERVIEW
Toxic by inhalation and if swallowed.The toxicological properties of this material have not been fully investigated.Moisture sensitive.
Potential Health Effects
Eye:
May cause eye irritation.
Skin:
May cause skin irritation.
Ingestion:
Poison by ingestion. The toxicological properties of this substance have not been fully investigated.
Inhalation:
The toxicological properties of this substance have not been fully investigated. Toxic if inhaled.
Chronic:
Not available.

Section 4 - FIRST AID MEASURES
Eyes: Immediately flush eyes with plenty of water for at least 15 minutes, occasionally lifting the upper and lower eyelids. Get medical aid immediately.
Skin:
Get medical aid immediately. Immediately flush skin with plenty of water for at least 15 minutes while removing contaminated clothing and shoes.
Ingestion:
Get medical aid immediately. Wash mouth out with water.
Inhalation:
Get medical aid immediately. Remove from exposure and move to fresh air immediately. If not breathing, give artificial respiration. If breathing is difficult, give oxygen.
Notes to Physician:

Section 5 - FIRE FIGHTING MEASURES
General Information:
As in any fire, wear a self-contained breathing apparatus in pressure-demand, MSHA/NIOSH (approved or equivalent), and full protective gear.
Extinguishing Media:
Use water spray, dry chemical, carbon dioxide, or chemical foam.

Section 6 - ACCIDENTAL RELEASE MEASURES
General Information: Use proper personal protective equipment as indicated in Section 8.
Spills/Leaks:
Absorb spill with inert material (e.g. vermiculite, sand or earth), then place in suitable container.

Section 7 - HANDLING and STORAGE
Handling:
Do not breathe dust, vapor, mist, or gas. Do not get in eyes, on skin, or on clothing. Use only in a chemical fume hood.
Storage:
Store in a cool, dry place. Store in a tightly closed container.
Keep under a nitrogen blanket.

Section 8 - EXPOSURE CONTROLS, PERSONAL PROTECTION
Engineering Controls:
Use adequate ventilation to keep airborne concentrations low.
Exposure Limits CAS# 17729-30-5: United Kingdom, WEL - TWA: (listed as arsenic compounds, n.o.s.): mg/m3 TWA (except arsine, as As) United Kingdom, WEL - STEL: (listed as arsenic compounds, n.o.s.) 0.3 mg/m3 STEL (except arsine, as As) United States OSHA: 0.5 mg/m3 TWA (listed under Arsenic).
Belgium - TWA: (listed as arsenic): 0.01 mg/m3 VLE Japan: (listed as arsenic compounds, n.o.s.): 3 g/m3 OEL (refere value, as As) Malaysia: (listed as arsenic): 0.01 mg/m3 TWA Netherlands: (listed as arsenic): 0.050 mg/m3 MAC Russia: (listed as silica, amorphous): 1 mg/m3 TWA Spain: (listed as arsenic compounds, n.o.s.): 0.1 mg/m3 VLA-ED (a As) Personal Protective Equipment Eyes: Not available.
Skin:
Wear appropriate protective gloves to prevent skin exposure.
Clothing:
Wear appropriate protective clothing to prevent skin exposure.
Respirators:
Follow the OSHA respirator regulations found in 29 CFR 1910.134 or European Standard EN 149. Use a NIOSH/MSHA or European Standard EN 149 approved respirator if exposure limits are exceeded or if irritation or other symptoms are experienced.

Section 9 - PHYSICAL AND CHEMICAL PROPERTIES

Physical State: Clear liquid
Color: light brown
Odor: stench
pH: Not available.
Vapor Pressure: Not available.
Viscosity: Not available.
Boiling Point: 50 - 53 deg C @ .75
Freezing/Melting Point: 0.5 deg C
Autoignition Temperature: Not available.
Flash Point: Not available.
Explosion Limits, lower: Not available.
Explosion Limits, upper: Not available.
Decomposition Temperature:
Solubility in water:
Specific Gravity/Density: .9940g/cm3
Molecular Formula: (Si(CH3)3)As
Molecular Weight: 294.48

Section 10 - STABILITY AND REACTIVITY
Chemical Stability:
Stable under normal temperatures and pressures.
Conditions to Avoid:
Incompatible materials, exposure to moist air or water.
Incompatibilities with Other Materials:
Strong oxidizing agents.
Hazardous Decomposition Products:
Carbon monoxide, carbon dioxide, silicon dioxide, oxides of arsenic.
Hazardous Polymerization: Has not been reported.

Section 11 - TOXICOLOGICAL INFORMATION
RTECS#:
CAS# 17729-30-5 unlisted.
LD50/LC50:
Not available.
Carcinogenicity:
[Tris(trimethylsilyl)]arsenide - IARC: Group 1 carcinogen (listed as Arsenic).

Section 12 - ECOLOGICAL INFORMATION


Section 13 - DISPOSAL CONSIDERATIONS
Dispose of in a manner consistent with federal, state, and local regulations.

Section 14 - TRANSPORT INFORMATION

IATA
Shipping Name: ORGANOARSENIC COMPOUND, N.O.S.*
Hazard Class: 6.1
UN Number: 3280
Packing Group: III
IMO
Shipping Name: ORGANOARSENIC COMPOUND, N.O.S.
Hazard Class: 6.1
UN Number: 3280
Packing Group: III
RID/ADR
Shipping Name: ORGANOARSENIC COMPOUND, N.O.S.
Hazard Class: 6.1
UN Number: 3280
Packing group: III

Section 15 - REGULATORY INFORMATION

European/International Regulations
European Labeling in Accordance with EC Directives
Hazard Symbols: T
Risk Phrases:
R 23/25 Toxic by inhalation and if swallowed.
Safety Phrases:
S 20/21 When using do not eat, drink or smoke.
S 28A After contact with skin, wash immediately with
plenty of water.
S 45 In case of accident or if you feel unwell, seek
medical advice immediately (show the label where
possible).
WGK (Water Danger/Protection)
CAS# 17729-30-5: No information available.
Canada
None of the chemicals in this product are listed on the DSL/NDSL list.
CAS# 17729-30-5 is not listed on Canada's Ingredient Disclosure List.
US FEDERAL
TSCA
CAS# 17729-30-5 is not listed on the TSCA inventory.
It is for research and development use only.


SECTION 16 - ADDITIONAL INFORMATION
N/A

上下游信息

  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    三(三甲基硅烷基)-胂盐酸 作用下, 以 四氢呋喃 为溶剂, 反应 16.0h, 以58%的产率得到Bis-trimethylsilyl-arsin
    参考文献:
    名称:
    二(四氢呋喃-O)镁-双[双(三甲基甲硅烷基)磷腈]和-芳族聚酰胺的合成参数
    摘要:
    n /仲-二丁锡镁与双(三甲基硅烷基)膦或-ar烷在THF中的反应生成[(Me 3 Si)2 E] 2 Mg·2THF类型的衍生物(EEP,As)。双[双(三甲基硅烷基)膦酸镁]·2THF在单斜空间群C 2 / c中结晶,a = 1861.7(3)pm,b = 976.0(3)pm,c = 1921.2(3)pm,β = 109.67 (1)°,Z =4。同系砷化物在三斜空间群中结晶,a = 980.7(2)pm,b = 1266.1(2)pm,c = 1437.6(2)pm,α = 78.29(1)°,β = 88.02(2)°,γ = 70.28(1)°和Z = 2。展示金字塔形的环境。
    DOI:
    10.1016/0022-328x(94)05124-t
  • 作为产物:
    描述:
    三甲基氯硅烷 在 sodium arsenide 作用下, 以 乙二醇二甲醚 为溶剂, 反应 2.0h, 以63%的产率得到三(三甲基硅烷基)-胂
    参考文献:
    名称:
    有机金属larsine:IX。叔丁基(trimethylelement(IVB))s和五羰基铬-,-钼-和-wolfram-komplexe
    摘要:
    二叔丁基氯ar与叔丁基锂反应生成三叔丁基ar,与三甲基氯硅烷-镁-四氢呋喃反应生成二叔丁基(三甲基甲硅烷基)ar。以类似的方式从三氯化砷与三甲基氯硅烷-镁-HMPA中获得三(三甲基甲硅烷基)ar。三甲基甲硅烷基赖氨酸与三甲基氯锗烷和-锡烷反应,得到相应的三甲基锗烷基和-锡烷基yl。有机金属ar与六羰基铬,-钼或-钨反应形成五羰基(有机金属metal)-铬,-钼或-钨配合物。报道了新的笨重的砷化氢配体和某些配合物的NMR,IR,拉曼和He(I)-PE数据。
    DOI:
    10.1016/s0022-328x(00)89149-4
  • 作为试剂:
    描述:
    1,1-dichloromethyl-N,N-dimethylamine三(三甲基硅烷基)-胂 作用下, 以86%的产率得到({[1-Dimethylamino-meth-(E)-ylidene]-arsanyl}-methylene)-dimethyl-ammonium; chloride
    参考文献:
    名称:
    (3+2)-cycloadditionen von 1,3-dipolen mit 1H-1,2,4λ3-diazaarsolen
    摘要:
    DOI:
    10.1016/s0040-4039(00)84689-4
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文献信息

  • Synthesis and characterization of four-membered gallium-arsenic ring compounds containing a bridging As(SiMe3)2 group: crystal structures of Ph2l and Ph2r
    作者:William K. Holley、Richard L. Wells、Soheila Shafieezad、Andrew T. McPhail、Colin G. Pitt
    DOI:10.1016/0022-328x(90)85445-5
    日期:1990.1
    The first organogallium four-membered ring compounds with arsenic, halogen mixed bridging to be characterized completely, Ph2 (X = Cl (1) and X = Br (2)) were prepared by the reaction of (Me3Si)3As (3) with Ph2GaCl and Ph2GaBr, respectively. X-ray crystallographic analyses show the compounds to be isostructural with each containing a non-planar Ga-As-Ga-X four membered ring. Isomorphous crystals of
    第一有机镓四元与砷,卤素混合桥接环化合物被完全表征中,Ph 2(X =氯(1)和X = Br的(2)),通过(Me中反应制备3 Si)的3如(3)分别用Ph 2 GaCl和Ph 2 GaBr。X射线晶体学分析表明该化合物是同构的,每个化合物都含有一个非平面的Ga-As-Ga-X四元环。1和2的同构晶体属于单斜晶系,空间群P 2 1 / c(C 5 2ħ)中,用四个分子在尺寸上的单元电池:一个10.560(3), b 15.797(3), Ç 20.591(4)α,β92.17(2)°, V 3433(2)埃3为1,和一10.653(1), b 15.777(2), ç 20.517(2)埃,β91.97(1)°, V 3446(1)埃3为2。环的非平面性表现为卤素原子相对于各自的Ga-As-Ga'平面的位移为0.256Å( 1)和0.293Å( 2)。与总体C 2 v的偏差对称用于减轻以这
  • The first gallium–arsenic compound containing a single Ga<sub>3</sub>As unit: isolation and crystal structure of [(thf)Br<sub>2</sub>Ga]<sub>3</sub>As (thf = tetrahydrofuran)
    作者:Richard L. Wells、Soheila Shafieezad、Andrew T. McPhail、Colin G. Pitt
    DOI:10.1039/c39870001823
    日期:——
    [(thf)Br2Ga]3As (thf = tetrahydrofuran), isolated from the products of the reaction of (Me3Si)3As with GaBr3, has been shown by X-ray crystallographic analysis to be the first example of a compound containing a single Ga3As unit.
    实验证明,(Me3Si)3As 与 GaBr3 反应产物中分离得到的 [(thf)Br2Ga]3As(thf = 四氢呋喃),通过 X 射线晶体学分析,是含有单个 Ga3As 单元的化合物中的首例。
  • Dynamic Distribution of Growth Rates within the Ensembles of Colloidal II−VI and III−V Semiconductor Nanocrystals as a Factor Governing Their Photoluminescence Efficiency
    作者:Dmitri V. Talapin、Andrey L. Rogach、Elena V. Shevchenko、Andreas Kornowski、Markus Haase、Horst Weller
    DOI:10.1021/ja0123599
    日期:2002.5.1
    ensembles of colloidally grown II-VI and III-V semiconductor nanocrystals was studied. A drastic difference in the photoluminescence efficiencies of size-selected fractions was observed for both organometallically prepared CdSe and InAs colloids and for CdTe nanocrystals synthesized in aqueous medium, indicating a general character of the phenomenon observed. The difference in the photoluminescence efficiencies
    研究了胶体生长的 II-VI 和 III-V 半导体纳米晶体的集合内的特性分布。对于有机金属制备的 CdSe 和 InAs 胶体以及在水性介质中合成的 CdTe 纳米晶体,观察到尺寸选择部分的光致发光效率存在显着差异,表明所观察到的现象的一般特征。光致发光效率的差异归因于源自奥斯特瓦尔德成熟生长机制的纳米晶体的不同平均表面无序,当整体中较大的颗粒以溶解较小颗粒为代价生长时。在生长的任何阶段,生长胶体纳米晶体整体中只有一小部分颗粒具有最完美的表面,因此,显示出最有效的光致发光。这可以通过描述胶体溶液中纳米晶体整体演化的理论模型来解释。在生长的纳米晶体的集合中,具有最高光致发光的颗粒部分对应于具有几乎为零的平均生长速率的颗粒尺寸。在任何给定的反应条件下,较小的平均增长率导致表面无序程度尽可能低。
  • The Parent Diarsene HAs=AsH as Side‐on Bound Ligand in an Iron Carbonyl Complex
    作者:Reinhard Rund、Gábor Balázs、Michael Bodensteiner、Manfred Scheer
    DOI:10.1002/anie.201909423
    日期:2019.11.4
    diarsene HAs=AsH ligand attracts special interest concerning its bonding relation in comparison to its isolable relative, ethene. Herein, by the methanolysis of [Fe(CO)4 }As(SiMe3 )3 ] (1) the synthesis of [Fe(CO)4 }(η2 -As2 H2 )] (2) is reported, containing a parent diarsene as unprecedented side-on coordinated ligand. Following this synthetic route, also the D-labeled complex [Fe(CO)4 }(η2 -As2
    与它的可分离的相对乙烯相比,末端二芳烃HAs = AsH配体引起了特别的关注。在本文中,通过[[Fe(CO)4} As(SiMe3)3](1)的甲醇分解,报道了[Fe(CO)4}(η2-As2H2)](2)的合成,其中含有母体芳烃作为前所未有的侧配配体。遵循该合成路线,还可以分离D标记的复合物[Fe(CO)4}(η2-As2D2)](2D)。通过DFT计算阐明了2的电子结构和键合情况,发现2最能描述为类似烯烃的络合物。此外,研究了2对路易斯酸[M(CO)5}(thf)](M = Cr,W)的反应性,从而形成了配合物[Fe(CO)4 AsHW(CO)5] 2( 3)和[Fe(CO)4} 2 AsH Cr(CO)5}](4)。
  • Improved Precursor Chemistry for the Synthesis of III–V Quantum Dots
    作者:Daniel K. Harris、Moungi G. Bawendi
    DOI:10.1021/ja309863n
    日期:2012.12.19
    The synthesis of III-V quantum dots has been long known to be more challenging than the synthesis of other types of inorganic quantum dots. This is attributed to highly reactive group-V precursors. We synthesized molecules that are suitable for use as group-V precursors and characterized their reactivity using multiple complementary techniques. We show that the size distribution of indium arsenide
    众所周知,III-V 族量子点的合成比其他类型的无机量子点的合成更具挑战性。这归因于高反应性的 V 族前体。我们合成了适合用作 V 族前体的分子,并使用多种互补技术表征了它们的反应性。我们表明,砷化铟量子点的尺寸分布确实随着前体反应性的降低而改善。
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