METHOD OF SELECTIVELY FORMING COBALT METAL LAYER BY USING COBALT COMPOUND, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING COBALT COMPOUND
申请人:SAMSUNG ELECTRONICS CO., LTD.
公开号:US20210032279A1
公开(公告)日:2021-02-04
A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,
Synthesis and surface activity study of novel branched zwitterionic heterogemini fluorosurfactants with CF3CF2CF2C(CF3)2 group
作者:Chao Lin、Renming Pan、Ping Xing、Biao Jiang
DOI:10.1016/j.jfluchem.2018.07.015
日期:2018.10
facile synthesis of four fluorinated zwitterionic heterogemini surfactants bearing branched CF3CF2CF2C(CF3)2-group with perfluoro-2-methyl-2-pentene as starting material. The surface activities of as-prepared four surfactants were found to be better than that of sodium perfluorooctanoate. Meanwhile, our fluorinated surfactants with double hydrophobic chains showed much better surface activities than