申请人:Lei Xinjian
公开号:US20130008345A1
公开(公告)日:2013-01-10
Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries.
本发明揭示了包括钪、钇、镧、铈、镨、钕、钐、铕、钆、铽、镝、钬、铒、铥、镱、铝、镓、铟、锰、锑、铋等三价金属配合物家族,以及镁、钙、锶、钡、锰、钴、铁、镍、钌、铜、锌、镉等二价金属配合物家族。这些金属配合物可以用作半导体工业中沉积金属或金属氧化物薄膜的前体。