Abstract The phase diagram of the V–Co–Sb ternary system was constructed at 870 K over the whole concentration range using X-ray powder diffraction and electron probe microanalysis. The formation of one ternary compound VCoSb with MgAgAs type structure (half-Heusler phase, space group F-43m, a = 0.57838(2) nm) was confirmed. The influence of V doping on electrical transport property behavior of the binary
摘要 使用 X 射线粉末衍射和电子探针微量分析在整个浓度范围内在 870 K 下构建了 V-Co-Sb 三元系统的相图。证实了一种具有 MgAgAs 型结构(半赫斯勒相,空间群 F-43m,a = 0.57838(2) nm)的三元化合物 VCoSb 的形成。通过测量电阻率和塞贝克系数以及从头算 DFT 计算,研究了 V 掺杂对二元方钴矿 CoSb3(CoAs3 型,空间群 Im-3)电传输特性的影响。
Stabilization of the New Antimonide Zr2V6Sb9 by V–V and Sb–Sb Bonding
The metal-rich antimonideZr2V6Sb9 has been prepared by arc-melting of stoichiometric mixtures of Zr, V, and VSb2. Zr2V6Sb9 is the first example of a ternary ordered (filled) variant of the unusual V15Sb18 structure type. In addition to strong metal–antimony bonding, the crystal structure is significantly stabilized by bonding V–V and Sb–Sb interactions, whereas the Zr atoms do not form short metal–metal
Grison, B.; Beck, P. A., Acta Crystallographica, 1962, vol. 15, p. 807 - 808
作者:Grison, B.、Beck, P. A.
DOI:——
日期:——
Phase equilibria in the V-Ni-Sb system
作者:Ya. F. Lomnytska、O. P. Pavliv
DOI:10.1134/s0020168507060106
日期:2007.6
Phase relations in the V-Ni-Sb system have been studied by x-ray diffraction, and the 1070-K section of its phase diagram has been constructed in the region 0-67 at % Sb. The VSb phase (NiAs structure) is shown to have a homogeneity range: V1.04-1.00Sb0.96-1.00 (a = 0.4274(1)-0.4266(2) nm, c = 0.5464(2)-0.5448(4) nm). The binary antimonides with the NiAs structure dissolve the third component. V solubility in NiSb is within 3.5 at %. Ni dissolution in VSb is accompanied by partial Ni substitution for V and Ni incorporation into position 2d of space group P6(3)/mmc, up to the composition V0.84Ni0.32Sb0.84 (a = 0.42187(6) nm, c = 0.54000(9) nm).