The present application provides precursor compounds useful for deposition of a group 11 metal on a substrate, for example, a microelectronic device substrate, as well as methods of synthesizing such precursor compounds. The precursor compounds provided are mono-metallic compounds comprising a diaminocarbene (DAC) having the general formula: DAC - M - X. Where the diaminocarbene is an optionally substituted, saturated N-heterocyclic diaminocarbene (sNHC) or an optionally substituted acyclic diaminocarbene, M is a group 11 metal, such as copper, silver or gold; and X is an anionic ligand. Also provided are methods of synthesizing the precursor compounds, metal deposition methods utilizing such precursor compounds, and to composite materials, such as, e.g., microelectronic device structures, and products formed by use of such precursors and deposition methods.
本申请提供了用于在基底上沉积11族
金属的前体化合物,例如微电子器件基底,以及合成这种前体化合物的方法。所提供的前体化合物是包含有一种具有一般式的二
氨基卡宾(
DAC)的单
金属化合物:
DAC - M - X。其中,二
氨基卡宾是一种可选择取代的饱和N-杂环二
氨基卡宾(sNHC)或可选择取代的非环二
氨基卡宾,M是11族
金属,如
铜、
银或
金;X是一种阴离子
配体。还提供了合成前体化合物的方法,利用这种前体化合物的
金属沉积方法,以及复合材料,例如微电子器件结构,以及通过使用这种前体和沉积方法形成的产品。