Resist underlayer film composition, patterning process, and method for forming resist underlayer film
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US10241412B2
公开(公告)日:2019-03-26
Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.
本发明提供了一种抗蚀剂底层薄膜组合物,该组合物具有优异的抗碱性过氧化氢水溶液性能、间隙填充和平面化特性以及干蚀刻特性,其中该抗蚀剂底层薄膜组合物用于多层抗蚀剂方法,该抗蚀剂底层薄膜组合物包括:(A1) 聚合物 (1A),包括一个或两个或两个以上由以下通式 (1) 代表的重复单元;(A2) 一个或两个或两个以上的多酚化合物,其式重为 2,000 或以下,且不具有 3,4- 二羟基苯基;以及 (B) 有机溶剂。