samarium orthotitanite

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 镧系有机物
• 英文名称: samarium orthotitanite
• 英文别名: samarium titanate(III)；samarium titanate；Samarium;titanium;trihydrate；samarium;titanium;trihydrate
• 化学式: O₃SmTi
• 分子量: 246.238
• InChiKey: CJCDKGMUQSIBAX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -2.48
• 重原子数：
  5
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  3
• 氢给体数：
  3
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  samarium orthotitanite 在 air 作用下， 以 neat (no solvent) 为溶剂， 生成 samarium dititanate
  参考文献：
  名称：

  Bazuev, G. V.; Shveikin, G. P., Russian Journal of Inorganic ChemistryRuss. J. Inorg. Chem. (Transl. of Zh. Neorg. Khim.), 1977, vol. 22, p. 675 - 678

  摘要：

  DOI：
• 作为产物：
  描述：

  samarium(III) oxide 、 titanium(III) oxide 以 neat (no solvent) 为溶剂， 生成 samarium orthotitanite
  参考文献：
  名称：

  混合原钛酸盐La1−xSmxTiO3 (0≦x≦1)的磁学研究

  摘要：

  研究了混合镧系元素固溶体 La1-xSmxTiO3 (x=0, 0.0625, 0.125, 0.1875, 0.25, 0.375, 0.5, 0.75 和 1) 的磁性和结构特性。发现所有系统在整个组成范围0≤x≤1内形成斜方晶钙钛矿相（GdFeO3型）。LaTiO3 (x=0) 在 TN（尼尔温度）~130 K 处显示出所谓的倾斜反铁磁有序。SmTiO3 (x=1) 的有序温度为~50 K。固溶体化合物在 TN 处也表现出磁有序，随着 x 稳定下降。然而，一些富 La 系统中的 χ-T（直流磁化率 - 温度）曲线具有 0

  DOI：

  10.1016/s0925-8388(99)00107-3

文献信息

• Meta–Insulator Phenomena in Strongly Correlated Oxides. The Vacancy-Doped Titanate Perovksites, Nd1−xTiO3 and Sm1−xTiO3
  作者：G. Amow、N.P. Raju、J.E. Greedan

  DOI：10.1006/jssc.2000.8932

  日期：2000.11

  Electrical transport, both resistivity and thermopower, and heat capacity data are reported for two systems of cation vacancy-doped titanate perovskites, Nd1−xTiO3 and Sm1−xTiO3. In the former case the range of x is from 0.33 to 0.00 and for the latter from 0.17 to 0.00. Thus, the nominal carrier concentration, n, can be varied from 0 (x=0.33) to 1.0 (x=0.00) electrons per Ti atom. For the Nd series

  报告了两种阳离子空位掺杂钛酸酯钙钛矿体系的电输运（电阻率和热功率）以及热容量数据，分别为Nd 1- x TiO 3和Sm 1- x TiO 3。在前者的情况下，x的范围是0.33至0.00，而后者的范围是0.17至0.00。因此，标称载流子浓度n可以从每个Ti原子0（x = 0.33）到1.0（x = 0.00）个电子变化。对于Nd系列，可以看到两个不同的金属-绝缘体跃迁（MIT），其中一个是通过电子掺杂电荷转移绝缘体CTI（x = 0.33）获得的，该跃迁发生在x大约为0.20，另一个是通过对Mott-Hubbard绝缘子MHI（x = 0.00）进行空穴掺杂，在x大约0.10处发现的。在CTI成分附近开始，x = 0.30，从电阻率和热功率数据中发现了可变范围跳变的证据。莫特金属化发生在x = 0.20附近，并且在x = 0.20和0.10之间可以看到费米-液（FL）行为（电阻率的T 2依赖性）。的系数Ť
• An Investigation of the Magnetic Properties of Sm1−xTiO3forx=0.03, 0.05, and 0.10: Magnetic Structure Determination of Sm0.97TiO3by Short-Wavelength Neutron Diffraction on Single Crystals
  作者：G. Amow、J.E. Greedan、C. Ritter

  DOI：10.1006/jssc.1998.7989

  日期：1998.11

  this behavior vanishes. The magnetic structure determination of thex=0.03 compound has been accomplished by using low-temperature single-crystal neutron diffraction. The room temperature crystal structure is a distorted orthorhombic perovskite structure belonging toPnma, which is preserved down to 15 K. The magnetic structure is found to be consistent with aGxGymoment configuration on the Ti(III) sublattice

  制备了Sm 0.97 TiO 3单晶，并对其磁性进行了研究。直流磁化率测量表明以上为100K顺磁居里-外斯行为而两个磁跃迁在观察Ť Ñ ~52 K和Ť Ñ〜40 K.类似的观察为反铁磁行为已经进行了对于X = 0.05的化合物与Ť Ñ〜 40 K，而对于x = 0.10的化合物，此行为消失。x的磁性结构测定通过使用低温单晶中子衍射已完成= 0.03的化合物。室温晶体结构是属于Pnma的畸变正交钙钛矿结构，保留至15K。该磁性结构与Ti（III）子晶格上的G x G y矩构型和C z一致。 Sm（III）子晶格上的力矩配置。磁矩估计为0.72（1）和0.43（1）μ乙在Ti（III）和Sm（III）亚晶格分别。矩的取向被发现是7（3）°，X -轴为钛（III）和2（2）°到žSm（III）的轴。
• Batsanov, S. S.; Egorov, V. A.; Bokarev, V. P., Russian Journal of Inorganic Chemistry, 1977, vol. 22, p. 1752 - 1754
  作者：Batsanov, S. S.、Egorov, V. A.、Bokarev, V. P.、Kopaneva, L. I.、Dorogova, G. V.

  DOI：——

  日期：——
• Magnetic studies of La1−xSmxTiO3 and Ln1−xNdxTiO3 (Ln=Ce and Pr; 0≦x≦1)
  作者：K Yoshii、A Nakamura

  DOI：10.1016/s0921-4526(98)01079-5

  日期：1999.1

  It was found that solid solutions La1-xSmxTiO3 and Ln(1 - x)Nd(x)TiO(3) (Ln = Ce and Pr) form an orthorhombic perovskite phase (GdFeO3 type) for 0 less than or equal to x less than or equal to 1. La1 - xSmxTiO3 with 0 < x < 0.3 exhibited susceptibility maxima at 60-90 K in their susceptibility-temperature curves. In case of Ln(1 - x)Nd(x)TiO(3) (Ln = Ce and Pr), such maxima occurred in a much larger x region, i.e., 0.5 < x < 1. (C) 1999 Elsevier Science B.V. All rights reserved.
• Transport and magnetic properties of a Mott-Hubbard system whose bandwidth and band filling are both controllable: <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>R</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ca</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">TiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo><mml:mi>y</mml:mi><mml:mo>/</mml:mo><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
  作者：T. Katsufuji、Y. Taguchi、Y. Tokura

  DOI：10.1103/physrevb.56.10145

  日期：——

  Transport and magnetic properties of R1-xCaxTiO3+y/2 have been systematically investigated varying the one-electron bandwidth (W) and the band filling (n=1-delta), which can be controlled by the R-dependent lattice distortion and by the Ca content x and/or oxygen offstoichiometry y (delta=x+y), respectively. The end compound RTiO3 is a 3d(1) Mott-Hubbard insulator and its charge-gap magnitude increases with decreasing ionic radius of R, i.e., an increase of electron correlation (U/W) in proportion with (U/W)-(U/W)(c), where (U/W)(c) is the critical value for the (hypothetical) n=1 Mott transition. Such a Mott insulator is transformed to a correlated metal by substitution of R with Ca (hole doping), and the nominal hole concentration required for the insulator-metal transition (delta(c)) increases in proportion with (U/W)-(U/W)(c). Concerning magnetism, RTiO3 with R=La, Pr, Nd, and Sm, shows the antiferromagnetic ordering and its Neel temperature (T-N) decreases with smaller R. T-N also decreases with Ca doping, but remains finite up to the metal-insulator phase boundary. On the basis of these results, electronic phase diagrams are derived for a series of titanates as an electron-correlated system with changes of two parameters, i.e., the strength of electron correlation and band filling. Possible origins of the insulating state with finite hole doping are also discussed in terms of the kinetic energy of doped carriers in the Mott-Hubbard insulator. [S0163-1829(97)05640-3].