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1,1,3,3-四(甲氧基甲基)脲 | 112288-39-8

中文名称
1,1,3,3-四(甲氧基甲基)脲
中文别名
——
英文名称
1,1,3,3-tetrakis(methoxymethyl)urea
英文别名
1,1,3,3-tetra-methoxymethylurea;tetra(methoxymethyl)urea;N,N,N',N'-Tetrakis(methoxymethyl)urea
1,1,3,3-四(甲氧基甲基)脲化学式
CAS
112288-39-8
化学式
C9H20N2O5
mdl
——
分子量
236.268
InChiKey
GQNTZAWVZSKJKE-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    302.0±42.0 °C(Predicted)
  • 密度:
    1.103±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    -0.5
  • 重原子数:
    16
  • 可旋转键数:
    8
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.89
  • 拓扑面积:
    60.5
  • 氢给体数:
    0
  • 氢受体数:
    5

反应信息

  • 作为反应物:
    描述:
    3-乙基-3-氧杂丁环甲醇1,1,3,3-四(甲氧基甲基)脲对甲苯磺酸 作用下, 以 甲苯 为溶剂, 反应 3.0h, 生成
    参考文献:
    名称:
    착색 조성물, 컬러 필터 및 컬러 액정 표시 소자
    摘要:
    本发明提供了一种能够具有足够的耐光性,即使在低光照条件下也能形成优秀的像素和黑色基质的着色组合物。该着色组合物包括(A)着色剂,(B)结合剂树脂和(C)含有如下化学式1所示结构的化合物。在化学式1中,X代表具有氧化物基团、氧丙烯基团或共轭不饱和键的基团,“*”表示结合手。
    公开号:
    KR101602005B1
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文献信息

  • RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:US20160145231A1
    公开(公告)日:2016-05-26
    A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.
    描述了一种包含由通式(1)或(2)表示的化合物的光刻胶组合物,使用该组合物形成光刻胶图案的方法,用于该组合物的多化合物,以及可以由其衍生的醇化合物。
  • Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
    申请人:——
    公开号:US20040167322A1
    公开(公告)日:2004-08-26
    A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
    一种化学放大型抗蚀组合物,包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷,具有许多优点,包括提高分辨率,改善焦点宽度,即使在长期PED上也减少线宽变化或形状退化,涂层、显影和剥离后减少残留物,并在显影后改善图案轮廓,因此适用于微加工。
  • NOVOLAC RESIN AND RESIST FILM
    申请人:DIC Corporation
    公开号:US20180334523A1
    公开(公告)日:2018-11-22
    Provided are a novolac resin having developability, heat resistance, and dry etching resistance, and a photosensitive composition, a curable composition, and a resist film. A novolac resin including, as a repeating unit, a structural moiety represented by Structural Formula (1) or (2): (in the formula, Ar represents an arylene group, R 1 's each independently represent any one of a hydrogen atom, an alkyl group, an alkoxy group, and a halogen atom, m's each independently represent an integer of 1 to 3, and X is any one of a hydrogen atom, a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group) in which at least one of X's present in the resin is any one of a tertiary alkyl group, an alkoxyalkyl group, an acyl group, an alkoxycarbonyl group, a hetero atom-containing cyclic hydrocarbon group, and a trialkylsilyl group.
    提供一种具有可开发性、耐热性和干法蚀刻抗性的新戊醛树脂,以及一种光敏组合物、可固化组合物和抗蚀膜。一种新戊醛树脂包括以下结构单元: (在公式中,Ar代表芳基,R 1 分别独立地代表氢原子、烷基、烷氧基和卤素原子中的任意一种,m分别独立地代表1至3的整数,X代表氢原子、三级烷基、烷氧基烷基、酰基、烷氧羰基、含杂原子的环烃基和三烷基基中的任意一种),树脂中至少有一个X是三级烷基、烷氧基烷基、酰基、烷氧羰基、含杂原子的环烃基和三烷基基中的任意一种。
  • Photoacid generators, chemically amplified resist compositions, and patterning process
    申请人:Ohsawa Youichi
    公开号:US20070292768A1
    公开(公告)日:2007-12-20
    A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.
    一种光酸发生剂的化学式为(1)。包括该光酸发生剂的化学增感抗蚀组合物具有诸如高分辨率、焦点宽度、长期PED尺寸稳定性和令人满意的图案轮廓形状等优点。当该光酸发生剂与具有除了缩醛类型以外的酸敏感基团的树脂结合时,可以改善分辨率和顶部损失。该组合物适用于深紫外光刻。
  • NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
    申请人:Ohsawa Youichi
    公开号:US20090246694A1
    公开(公告)日:2009-10-01
    Photoacid generators generate sulfonic acids of formula ( 1 a) upon exposure to high-energy radiation. ROC(═O)R 1 —COOCH 2 CF 2 SO 3 − H + (1a) RO is OH or C 1 -C 20 organoxy, R 1 is a divalent C 1 -C 20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
    光酸发生剂在高能辐射作用下生成式(1a)的磺酸。 ROC(═O)R1—COOCH2CF2SO3−H+(1a) RO为OH或C1-C20有机氧基,R1为二价的C1-C20脂肪族基团或与RO形成环状结构。这些光酸发生剂与树脂相容,可以控制酸的扩散,因此适用于化学增感抗蚀组合物的使用。
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