There are disclosed a method of manufacturing a semiconductor device by forming a mask with a photoresist on a conductive layer formed on a semiconductor substrate and then forming a wiring structure by dryetching which method comprises a cleaning step of peeling a protecting deposition film formed on side walls of the conductive layer and the photoresist by using a cleaning agent for a semiconductor device comprising an aqueous solution containing a specific quaternary ammonium salt and a fluoro-compound; and a cleaning agent for a semiconductor device which comprises a specific quaternary ammonium salt and a fluoro-compound, and optionally an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. The use of the above cleaning agent in the method of manufacturing a semiconductor device can peel out the protecting deposition film with extreme certainty, whereby the surface of the conductive layer is decontaminated to high cleanness and corrosion problem is eliminated.
本发明公开了一种通过在半导体衬底上形成的导电层上用光致抗蚀剂形成掩膜,然后通过干蚀刻形成布线结构来制造半导体器件的方法,该方法包括一个清洁步骤,即使用一种半导体器件用清洁剂剥离在导电层和光致抗蚀剂侧壁上形成的保护沉积膜,该清洁剂包括一种含有特定季
铵盐和
氟化合物的
水溶液;和一种用于半导体器件的清洗剂,该清洗剂包括一种特定的季
铵盐和一种
氟化合物,以及一种可选的有机溶剂,该有机溶剂选自由酰胺类、
内酯类、腈类、
醇类和
酯类组成的组。在半导体设备的制造方法中使用上述清洁剂,可以非常准确地剥离保护沉积膜,从而使导电层表面得到高度清洁的净化,消除腐蚀问题。