2,3-二溴丙基6-重氮基-5,6-二氢-5-氧代萘-1-磺酸酯

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 中文名称: 2,3-二溴丙基6-重氮基-5,6-二氢-5-氧代萘-1-磺酸酯
• 英文名称: 2,3-dibromopropyl (6Z)-6-diazo-5-oxonaphthalene-1-sulfonate
• 化学式: C13H10Br2N2O4S
• 分子量: 450.1
• InChiKey: QPDJAIAXLQDVMI-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5
• 重原子数：
  22
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.23
• 拓扑面积：
  103
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  、 三(6-重氮-5-氧代-5,6-二氢-1-萘磺酸)-4-苯甲酰基-1,2,3-苯三(酚)酯 、 4,4'-di(1,2-naphthoquinone-2-diazide-5-sulfonyl-oxy)-benzophenone 、 、 4-苯甲酰基-1,3-苯二酚双(6-偶氮-5,6-二氢-5-氧代萘-1-磺酸)酯 、 2,3-二溴丙基6-重氮基-5,6-二氢-5-氧代萘-1-磺酸酯 生成 5-(4-benzoyl-2,3-dihydroxy-phenoxysulfonyl)-1-hydroxy-naphthalene-2-diazonium-betaine
  参考文献：
  名称：

  Low striation positive diazoketone resist composition with cyclic

  摘要：

  提供了一种新型光刻胶配方，具有低条纹和优异的润湿性能。该光刻胶组合物可通过旋涂在集成电路制造中使用的各种基底上应用。该发明的基本组成部分是溶剂组合物，其中包括环戊酮（或环戊酮-环己酮混合物）和一个碳数为5-12的脂肪醇。当这些溶剂成分以某些特定比例使用时，可以意外地提供各种基底的良好润湿性和低条纹薄膜。

  公开号：

  US04526856A1

文献信息

• Photochemical image process of positive photoresist element with
  申请人：Hoechst Celanese Corporation

  公开号：US05059513A1

  公开（公告）日：1991-10-22

  Actinic (deep ultraviolet, ultraviolet and visible) light sensitive positive photoresist compositions containing a mixture of an alkali-insoluble photoactive compound capable of being transformed into an alkali-soluble species upon exposure to actinic radiation, in an amount sufficient to render the mixture relatively alkali insoluble and a polymer comprising an amount of CO--NH--CO groups, such as maleimide and especially maleimide--substituted styrene copolymers, sufficient to render the mixture readily alkali soluble upon exposure to actinic radiation are disclosed. The preferred copolymers include maleimide/styrene or .alpha.-methylstyrene in a 1:1 molar ratio. The preferred methylstyrene in a 1:1 molar ratio. The preferred photoactive compound suitable for a positive photoresist composition responsive to deep UV actinic radiation has the formula 18-B in Table I. The present invention also comtemplates photosensitive elements and thermally stable phtochemically imaged systems based on the actinic light sensitive positive photoresist compositions. The positive photoresist compositions are coated onto a substrate to produce a photosensitive element, which upon exposure to a pattern of actinic radiation of wavelength in the range of about 200-700 nm produces a photochemically imaged system that can be treated with an alkaline developer to form highly resolved patterns, by highly selective removal of exposed areas. After development, preferred embodiments of the photo-chemically images systems exhibit insignificant changes in the highly resolved features (one micron) in the patterned image upon postbaking at temperatures of about 230.degree. C. and is, thereafter readily stripped. The high thermal stability exhibited by the photochemically imaged systems formed from the positive photoresist compositions of the present invention allows faster processing at higher temperatures, on equipment like plasma etchers and ion implanters; the developed photochemically imaged systems of the present invention retain high resolution, i.e., retain sharp, steep patterned image profiles.

  本发明公开了一种敏感于Actinic（深紫外线、紫外线和可见光）光的正向光刻胶组合物，其包含一种能够在暴露于Actinic辐射下转化为碱溶性物种的碱不溶性光活性化合物的混合物，其量足以使混合物相对碱不溶性，并且包含一种聚合物，该聚合物包含足量的CO--NH--CO基团，例如马来酰亚胺和特别是马来酰亚胺取代的苯乙烯共聚物，其量足以使混合物在暴露于Actinic辐射下很容易溶于碱。首选的共聚物包括马来酰亚胺/苯乙烯或α-甲基苯乙烯在1:1的摩尔比。首选的甲基苯乙烯在1:1的摩尔比。适用于响应深紫外线Actinic辐射的正向光刻胶组合物的首选光活性化合物具有表I中的18-B式。本发明还包括基于Actinic光敏正向光刻胶组合物的光敏元件和热稳定的光化学成像系统。将正向光刻胶组合物涂覆在基底上以产生光敏元件，该元件在暴露于波长在约200-700nm的Actinic辐射的图案下产生可进行碱性显影的光化学成像系统，通过高度选择性地去除暴露区域来形成高度分辨率的图案。显影后，本发明的光化学成像系统的首选实施例在230°C的后烘烤下高分辨率特征（一微米）的图案图像变化微不足道，并且随后很容易去除。本发明的正向光刻胶组合物形成的光化学成像系统表现出的高热稳定性允许在像等离子体刻蚀机和离子注入机等设备上以更高的温度进行更快的处理；本发明的开发的光化学成像系统保持高分辨率，即保持锐利、陡峭的图案图像轮廓。
• Positive photoresist thermally stable compositions and elements having
  申请人：Hoechst Celanese Corporation

  公开号：US04857435A1

  公开（公告）日：1989-08-15

  Actinic (deep ultraviolet, ultraviolet and visible) light sensitive positive photoresist compositions containing a mixture of an alkali-insoluble photoactive compound capable of being transformed into an alkali-soluble species upon exposure to actinic radiation, in an amount sufficient to render the mixture relatively alkali insoluble and a polymer comprising an amount of --CO--NH--CO-- groups, such as maleimide and especially maleimide-substituted styrene copolymers, sufficient to render the mixture readily alkali soluble upon exposure to actinic radiation are disclosed. The preferred copolymers include maleimide/styrene or .alpha.-methylstyrene in a 1:1 molar ratio. The preferred photoactive compound suitable for a positive photoresist composition responsive to deep UV actinic radiation has the formula 18-B in Table I. The present invention also contemplates photosensitive elements and thermally stable photochemically imaged systems based on the actinic light sensitive positive photoresist compositions. The positive photoresist compositions are coated onto a substrate to produce a photosensitive element, which upon exposure to a pattern of actinic radiation of wavelength in the range of about 200-700 nm produces a photochemically imaged system that can be treated with an alkaline developer to form highly resolved patterns, by highly selective removal of exposed areas. After development, preferred embodiments of the photochemically images systems exhibit insignificant changes in the highly resolved features (one micron) in the patterned image upon postbaking at temperatures of about 230.degree. C. and is, thereafter readily stripped. The high thermal stability exhibited by the photochemically imaged systems formed from the positive photoresist compositions of the present invention allows faster processing at higher temperatures, on equipment like plasma etchers and ion implanters; the developed photochemically imaged systems of the present invention retain high resolution, i.e., retain sharp, steep patterned image profiles.

  本发明涉及一种深紫外线、紫外线和可见光敏感的阳性光刻胶组合物，其含有一种碱不溶性光活性化合物的混合物，该光活性化合物在暴露于光刻胶中的紫外线后能够转化为碱可溶性物质，其含量足以使混合物相对碱不溶性，并且包括一种聚合物，该聚合物包含足够量的--CO--NH--CO--基团，例如马来酰亚胺和尤其是马来酰亚胺取代的苯乙烯共聚物，使混合物在暴露于光刻胶中的紫外线后易于溶于碱性物质。优选的共聚物包括马来酰亚胺/苯乙烯或α-甲基苯乙烯的1:1摩尔比。适用于对深紫外线敏感的阳性光刻胶组合物的优选光活性化合物具有表I中的18-B式。本发明还涉及基于该光刻胶组合物的光敏元件和热稳定的光化学成像系统。将阳性光刻胶组合物涂覆在基板上，产生光敏元件，该元件在暴露于波长在约200-700 nm范围内的光刻胶图案后产生光化学成像系统，可以用碱性显影剂处理，通过高度选择性地去除暴露区域形成高度分辨率的图案。在显影后，本发明的光化学成像系统的优选实施例在230℃的后烘烤时高度分辨率特征（一微米）在图案图像中几乎不发生变化，之后容易剥离。由本发明的阳性光刻胶组合物形成的光化学成像系统表现出的高热稳定性允许在更高的温度下进行更快速的处理，例如在等离子体刻蚀机和离子注入器等设备上；本发明的开发光化学成像系统保持高分辨率，即保持尖锐、陡峭的图案图像轮廓。
• Positive photoresist compositions having deep UV response, photosensitive elements and thermally stable photochemically imaged systems containing same
  申请人：HOECHST CELANESE CORPORATION

  公开号：EP0140273A2

  公开（公告）日：1985-05-08

  Actinic (deep ultraviolet, ultraviolet and visible light sensitive positive photoresist compositions containing a mixture of an alkali-insoluble photoactive compound capable of being transformed into an alkali-soluble species upon exposure to actinic radiation, in an amount sufficient to render the mixture relatively alkali insoluble and a polymer comprising an amount of tCO-NH-COt groups, such as maleimide and especially maleimide - substituted styrene copolymers, sufficient to render the mixture readily alkali soluble upon exposure to actinic radiation are disclosed. The preferred copolymers include maleimide/styrene or a-methylstyrene in a 1:1 molar ratio. The preferred photoactive compound suitable for a positive photoresist composition responsive to deep UV actinic radiation has the formula 18-8 in Table I. The present invention also contemplates photosensitive elements and thermally stable photochemically imaged systems based on the actinic light sensitive positive photoresist compositions. The positive photoresist compositions are coated onto a substrate to produce a photosensitive element, which upon exposure to a pattern of actinic radiation of wavelength in the range of about 200-700 nm produces a photochemically imaged system that can be treated with an alkaline developer to form highly resolved patterns, by highly selective removal of exposed areas. After development, preferred embodiments of the photochemically images systems exhibit insignificant changes in the highly resolved features (one micron) in the patterned image upon postbaking at temperatures of about 230°C and is, thereafter readily stripped. The high thermal stability exhibited by the photochemically imaged systems formed from the positive photoresist compositions of the present invention allows faster processing at higher temperatures, on equipment like plasma etchers and ion implanters; the developed photochemically imaged systems of the present invention retain high resolution, i.e., retain sharp, steep patterned image profiles.

  本发明公开了阳极（深紫外线、紫外线和可见光敏感的正极光刻胶组合物，该组合物含有一种碱不溶性光活性化合物的混合物，该化合物在暴露于阳极辐射时能够转变成碱溶性物质，其含量足以使该混合物相对碱不溶，还含有一种包含一定量 tCO-NH-COt 基团的聚合物，例如马来酰亚胺，特别是马来酰亚胺-取代苯乙烯共聚物，其含量足以使该混合物在暴露于阳极辐射时容易碱溶解。优选的共聚物包括马来酰亚胺/苯乙烯或 a-甲基苯乙烯，摩尔比为 1:1。适用于对深紫外线辐射有反应的正性光刻胶组合物的优选光活性化合物具有表 I 中的式 18-8。本发明还考虑了基于光敏正性光刻胶组合物的光敏元件和热稳定光化学成像系统。将正性光致抗蚀剂组合物涂在基底上可产生光敏元件，该光敏元件暴露于波长范围约为 200-700 纳米的光辐射图案后，可产生光化学成像系统，该系统可用碱性显影剂处理，通过高度选择性地去除暴露区域，形成高分辨率图案。经过显影后，光化学成像系统的优选实施例在约 230°C 的温度下进行后烘烤时，图案图像中的高分辨率特征（一微米）会出现微小的变化，随后很容易剥离。由本发明的正性光刻胶组合物形成的光化学成像系统具有很高的热稳定性，可以在等离子刻蚀机和离子注入机等设备上以更高的温度进行更快的加工；本发明的光化学成像系统可以保持高分辨率，即保持清晰、陡峭的图案图像轮廓。
• Semiconductor devices, semiconductor packages and methods of forming the same
  申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

  公开号：US10665545B2

  公开（公告）日：2020-05-26

  Semiconductor devices, semiconductor packages and methods of forming the same are provided. One of the semiconductor device includes a dielectric layer and a connector. The dielectric layer includes a dielectric material and an additive, wherein the additive includes a compound represented by Chemical Formula 1. The connector is disposed in the dielectric layer.

  本文提供了半导体器件、半导体封装及其形成方法。其中一种半导体器件包括介电层和连接器。介电层包括介电材料和添加剂，其中添加剂包括由化学式 1 表示的化合物。连接器设置在介电层中。
• Semiconductor devices and methods of forming the same
  申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

  公开号：US11049812B2

  公开（公告）日：2021-06-29

  A semiconductor device includes a dielectric layer and a conductive structure in the dielectric layer. The dielectric layer includes a dielectric material and a compound represented by Chemical Formula 1. In Chemical Formula 1, R is the same as defined in the specification.

  一种半导体器件包括介电层和介电层中的导电结构。介电层包括一种介电材料和一种由化学式 1 表示的化合物。在化学式 1 中，R 与说明书中的定义相同。