Benzo[<i>d</i>][1,2,3]thiadiazole (isoBT): Synthesis, Structural Analysis, and Implementation in Semiconducting Polymers
作者:Zhihua Chen、Jennifer Brown、Martin Drees、Mark Seger、Yan Hu、Yu Xia、Damien Boudinet、Meko McCray、Massimiliano Delferro、Tobin J. Marks、Chuang-Yi Liao、Chung-Wen Ko、Yi-Ming Chang、Antonio Facchetti
DOI:10.1021/acs.chemmater.6b02813
日期:2016.9.13
BT-quaterthiophene based polymers (P4–P6) are synthesized and characterized to probe architectural, electronic structural, and device performance differences between the two families. The results demonstrate that isoBT complements BT in enabling high-performance optoelectronic semiconductors with P3 exhibiting hole mobilities surpassing 0.7 cm2/(V s) in field-effect transistors and power conversion efficiencies
苯并[ d ] [2,1,3]噻二唑(BT)是一种明显缺乏电子的杂环,广泛用于实现有机半导体,用于晶体管,太阳能电池,光电探测器和热电学。在这项贡献中,我们实施了相应的异构体苯并[ d ] [1,2,3]噻二唑(isoBT)以及新的6-氟-isoBT和5,6-二氟-isoBT单元作为合成子,用于与四噻吩(P1 - P3)。新的基于isoBT的小分子以及相应的基于BT-四噻吩的聚合物(P4 – P6)进行了综合和表征,以探究两个系列之间在架构,电子结构和设备性能方面的差异。结果表明,在isoBT实现高性能光电半导体与补充BT P3表现出空穴迁移率超过0.7厘米2在场效应晶体管和9%的功率转换效率/(V S)在本体异质结太阳能电池。