4-chloro-1-naphthonitrile | 16243-44-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 4-chloro-1-naphthonitrile
• 英文别名: 4-Chlor-[1]naphthonitril；4-chloronaphthalene-1-carbonitrile
• CAS: 16243-44-0
• 化学式: C₁₁H₆ClN
• 分子量: 187.628
• InChiKey: KLYDQWZSLRBNHM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  13
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  23.8
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  4-chloro-1-naphthonitrile 在 sodium tetrahydroborate 作用下， 以 水 、 乙腈 为溶剂， 生成 氰基萘
  参考文献：
  名称：

  硼酸酯和硼氢化物光还原取代的芳烃的电子转移机理

  摘要：

  电子激发的芳基腈和卤化物通过电子转移反应路径与硼氢化物或与硼酸烷基酯反应，生成还原产物。

  DOI：

  10.1016/s0040-4039(00)96711-x
• 作为产物：
  描述：

  4-氯-1-甲基萘 生成 4-chloro-1-naphthonitrile
  参考文献：
  名称：

  Makosza, Mieczyslaw; Ostrowski, Stanislaw, Journal of the Chemical Society. Perkin transactions II, 1991, p. 1093 - 1097

  摘要：

  DOI：

文献信息

• Acid-Base Properties of Substituted Naphthoic Acids in Nonaqueous Media
  作者：Patrik Pařík、Miroslav Ludwig

  DOI：10.1135/cccc19971737

  日期：——

  Thirteen substituted 1-naphthoic acids have been prepared and their dissociation constants, along with those of twenty-five substituted 2-naphthoic acids, have been measured potentiometrically in methanol, N,N-dimethylformamide, pyridine, and acetonitrile. The pK_HA values obtained have been treated by linear regression using four sets of substituent constants. The experimental data have also been interpreted by statistical methods using latent variables. The first latent variable calculated by these methods can be used as a new set of substituent constants for describing substituent effects in naphthalene skeleton.

  已经制备了十三种取代的1-萘甲酸和二十五种取代的2-萘甲酸，并在甲醇、N,N-二甲基甲酰胺、吡啶和乙腈中用电位滴定法测定了它们的解离常数。通过使用四组取代基常数对获得的pKHA值进行线性回归处理。实验数据还通过使用潜变量的统计方法进行解释。通过这些方法计算得到的第一个潜变量可以作为描述萘骨架中取代基效应的新一组取代基常数。
• Vicarious Nucleophilic Substitution of Hydrogen versus Bis-Annulation in the Reaction of Chloromethyl Aryl Sulfone Carbanion with Electrophilic Arenes
  作者：Mieczyslaw M\kakosza、Tomasz Glinka、Stanislaw Ostrowski、Andrzej Rykowski

  DOI：10.1246/cl.1987.61

  日期：1987.1.5

  The carbanion of chloromethyl aryl sulfone reacts with 1-cyanonaphthalene to form a bis-annulated product whereas with 1-nitronaphthalene vicarious nucleophilic substitution of hydrogen takes place. This result and the bis-annulation of quinoxalines and naphthyridines which was reported earlier are rationalized in terms of the negative charge delocalization in the intermediate σ-adducts.

  氯甲基芳基砜的碳负离子与 1-氰基萘反应形成双环产物，而与 1-硝基萘发生氢的亲核取代。这个结果和之前报道的喹喔啉和萘啶的双环化在中间 σ 加合物中的负电荷离域方面是合理的。
• CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
  申请人：Lee Wai Mun

  公开号：US20090130849A1

  公开（公告）日：2009-05-21

  A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.

  本文描述了一种化学机械平整化（或其他抛光）的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率，包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
• PYRROLIDINE INHIBITORS OF IAP
  申请人：Cohen Frederick

  公开号：US20090318409A1

  公开（公告）日：2009-12-24

  The invention provides novel inhibitors of IAP that are useful as therapeutic agents for treating malignancies where the compounds have the general formula I: wherein A, Q, X 1 , X 2 , Y, R 1 , R 2 , R 3 , R 4 , R 4 ′, R 5 , R 6 and R 6 ′ are as described herein.

  该发明提供了一种新型的IAP抑制剂，可用作治疗恶性肿瘤的治疗剂，其中化合物具有一般式I：其中A、Q、X1、X2、Y、R1、R2、R3、R4、R4'、R5、R6和R6'如本文所述。
• METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
  申请人：Lee Wai Mun

  公开号：US20100043823A1

  公开（公告）日：2010-02-25

  The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.

  本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法，包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分，如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。