Syntheses, Structures, and Characterization of Nickel(II) Stibines: Steric and Electronic Rationale for Metal Deposition
作者:William V. Taylor、Zhu-Lin Xie、Nicholas I. Cool、Sofia A. Shubert、Michael J. Rose
DOI:10.1021/acs.inorgchem.8b01565
日期:2018.8.20
compared to the reported phosphine complexes, indicating the weak donor strength of the stibine ligands and resultant low-energy ligand field d→d transitions. The square planar complex Ni(I)2(SbiPr3)2 reacts with CO to form the TBP complex Ni(I)2(SbiPr3)2(CO). Lastly, the complexes were investigated for nickel metal deposition on Si|Cu(100 nm) substrates. The complexes with the strongest donating ligand
均配和杂配锑配体Sb i Pr 3,Sb i Pr 2 Ph,SbMe 2 Ph和SbMePh 2与NiI 2的反应会在方形平面或三角双锥体(TBP)几何结构中生成稀有的Ni II锑复合物,具体取决于配体的空间大小。计算每个锑配体的托尔曼电子参数(DFT),以提供简单锑配体相对强度的列表资源。方形平面配合物的电子吸收光谱显示出特征谱带[λ最大≈560纳米(17900厘米-1),ε≈4330中号-1厘米–1 ]与报道的膦配合物相比具有较低的能量,表明斯蒂宾配体的弱供体强度以及由此产生的低能量配体场d → d跃迁。方形平面络合物Ni(I)2(Sb i Pr 3)2与CO反应形成TBP络合物Ni(I)2(Sb i Pr 3)2(CO)。最后,研究了用于在Si | Cu(100 nm)衬底上沉积镍金属的配合物。根据平衡反应Ni(I),具有最强供体配体Sb i Pr 3的配合物沉积了最纯的NiCu合金层2(Sb
Vibrational study of triethyl- and triisopropylantimony dihalides.