Electronic effects and mechanistic features in the rearrangement-displacement reactions of aryl(chloromethyl)diphenylsilanes with fluoride ion
作者:Steve L Aprahamian、Harold Shechter
DOI:10.1016/s0040-4039(00)88733-x
日期:1990.1
At 25°C aryl migrations from negatively-charged pentacoordinate silicon correlate with the abilities of the rearranging groups to bear negative charge, but at lower temperatures the migrations become less dependent on electron-withdrawing stabilization.
在25°C下,带负电荷的五配位硅的芳基迁移与重排基团带有负电荷的能力相关,但在较低的温度下,迁移对电子吸收稳定性的依赖性较小。